Dislocation Etch Pits in Single-Crystal and Poly crystalline Beryllium Oxide

Vandervoort, R.R.; Barmore, W. L.

doi:10.1063/1.1708065

Cited by 12 publications

(2 citation statements)

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“…Further selective etch experiments in the next decades replicated these results in a vast number of materials, under different temperature ranges and under irradiation conditions [50]. Materials tested in this way include the metals W [51], Fe [44,52], Fe-C [53], Fe-Si [16,54,55], Al [56], Cu [57][58][59][60], irradiated Cu [61], Al-Cu alloys [17,21,57,62], Ni [63], Pb [64], Mg [65], Zn [59,[66][67][68][69][70][71][72], Nb [73][74][75], α-Ti [76], In [77], K [52], Mo [65,78,79], Ag [80], and a number of ceramics and semiconductors, including pure Ge [81] and Si [82,83], LiF [48,[84][85][86], BeO [87], KCl [88], NaCl …”

Section: Experimental Evidencementioning

confidence: 99%

“…Further selective etch experiments in the next decades replicated these results in a vast number of materials, under different temperature ranges and under irradiation conditions [50]. Materials tested in this way include the metals W [51], Fe [44,52], Fe-C [53], Fe-Si [16,54,55], Al [56], Cu [57–60], irradiated Cu [61], Al–Cu alloys [17,21,57,62], Ni [63], Pb [64], Mg [65], Zn [59,66–72], Nb [73–75], α -Ti [76], In [77], K [52], Mo [65,78,79], Ag [80], and a number of ceramics and semiconductors, including pure Ge [81] and Si [82,83], LiF [48,84–86], BeO [87], KCl [88], NaCl [89], KBr [90,91], InSb [82,92], GaAs [93], GaSb [82], InP [94], GeSi [95,96]. In Si, particular focus was placed on studying the mobility of dislocations under various temperatures and doping conditions, often with seemingly contradictory results [82,…”

Section: Experimental Evidencementioning

confidence: 99%

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The mechanics and physics of high-speed dislocations: a critical review

Gurrutxaga-Lerma

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Dini

2020

International Materials Reviews

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High speed dislocations have long been identified as the dominant feature governing the plastic response of crystalline materials subjected to high strain rates. They allegedly control deformation and failure response of industrial processes in a large range of applications, including machining, laser shock peening, punching, drilling, crashworthiness, foreign object damage,etc. Despite decades of study, achieving a consensus on the role and influence high speed dislocations have on the materials response observed at the macro-scale by the means of rigorous mechanistic grounding remains elusive. This article reviews both experimental and theoretical efforts made to address this issue in a systematic way. The lack of experimental evidence and direct observation of high speed dislocations means that most work on the matter is rooted on theory and simulations. This article offers a critical review of the competing theoretical accounts of high speed mechanisms, their underlying hypothesis, insights, and shortcomings. It explores the role that the speed of sound plays in the modelling of high speed dislocations, the way dislocations are modelled in the elastic continuum and how this approach can be used to study plasticity at high strain rates. The role atomistic models of dislocations have played in clarifying high speed motion mechanisms, and how they have led to the development of dislocation velocity-stress relations describing dislocation mobility is then also discussed. The article also reviews modelling efforts aimed at describing high speed dislocation mobility, and how different proposed physical mechanisms believed influence the motion. The article closes with an overview of the current state of the art and suggestions for key developments needed to improve our fundamental understanding in future research.

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Section: Experimental Evidencementioning

confidence: 99%

“…Further selective etch experiments in the next decades replicated these results in a vast number of materials, under different temperature ranges and under irradiation conditions [50]. Materials tested in this way include the metals W [51], Fe [44,52], Fe-C [53], Fe-Si [16,54,55], Al [56], Cu [57–60], irradiated Cu [61], Al–Cu alloys [17,21,57,62], Ni [63], Pb [64], Mg [65], Zn [59,66–72], Nb [73–75], α -Ti [76], In [77], K [52], Mo [65,78,79], Ag [80], and a number of ceramics and semiconductors, including pure Ge [81] and Si [82,83], LiF [48,84–86], BeO [87], KCl [88], NaCl [89], KBr [90,91], InSb [82,92], GaAs [93], GaSb [82], InP [94], GeSi [95,96]. In Si, particular focus was placed on studying the mobility of dislocations under various temperatures and doping conditions, often with seemingly contradictory results [82,…”

Section: Experimental Evidencementioning

confidence: 99%