Etching studies of beryllium oxide crystals

Austerman, S.B.; Newkirk, J. B.; Smith, Deane K.; Newkirk, H.W.

doi:10.1007/bf00572423

Cited by 10 publications

(3 citation statements)

References 9 publications

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“…However, the current of the MIM device with the BeO thin film sintered at 1500 °C gradually increased below the nA range due to the applied voltages under both positive and negative bias. The leakage currents were 49 pA and 95 pA at −20 V and + 20 V, respectively, while no breakdown voltage arose in the MIM device with the BeO thin film sintered at 1500 °C over the voltage sweeping range of −20 V to 20 V, indicating that the BeO Although the active channel was patterned with a shadow mask for the lateral structure of the MIM device, an additional process such as wet etching is also possible if the proper etchants are used [36]. Contrary to the smooth surface of the active region, numerous defects and pinholes can be observed in the OM images of the active region of the MIM device with BeO layers after sintering at 1100 • C and 1300 • C (Supplementary Figure S4).…”

Section: Figure 1amentioning

confidence: 99%

“…The OM image of the MIM device under the 1500 • C sintering condition and the I-V characteristics of the MIM device with BeO thin films created with different sintering temperatures are correspondingly shown in Figure 7a,b. In the OM image, the patterned active channel distances between the lateral electrodes are 150 µm, and the width is 385 µm.Although the active channel was patterned with a shadow mask for the lateral structure of the MIM device, an additional process such as wet etching is also possible if the proper etchants are used[36]. Contrary to the smooth surface of the active region, numerous defects and pinholes can be observed in the OM images of the active region of the MIM device with BeO layers after sintering at 1100 • C and 1300 • C (Supplementary FigureS4).…”

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Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

et al. 2022

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Beryllium oxide (BeO) is considered to be an attractive alternative material for use in future industries in areas such as semiconductors, spacecraft, aircraft, and rocket technologies due to its high bandgap energy, useful melting point, good thermal conductivity, and dielectric constants. In this context, our approach is a novel method to produce BeO thin films based on a two-step spin-coating innovation of the conventional powder synthesis method. The surface morphology and the crystal structure of BeO thin films were observed to be dependent on the citric acid/beryllium sulfate ratio and the sintering temperature, respectively. To characterize the BeO films, X-ray photoelectron spectroscopy was conducted for an elemental analysis. Furthermore, the bandgap of the BeO thin films was determined by reflection electron energy loss spectroscopy. Finally, the leakage current of a planar metal–insulator–metal device consisting of Au/Ti/BeO thin film/Ti/Au electrodes was determined to be below the nA range over the linear voltage sweeping range of −20 V to +20 V. These results can assist researchers in the areas of morphology control strategies, phase transfer theories, and applications that utilize BeO thin film manufactured by a solution process.

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confidence: 99%

Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

et al. 2022

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“…It was cut on a diamond saw to have the orientation indicated in Fig.2. The crystal was etched in Li2MoO4-NaPO3 at .-~ 1000 °C to remove all surface damage due to the cutting operation (Austerman, Newkirk, Smith & Newkirk, 1967). This one crystal was used for all the experiments described here.…”

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X-ray diffraction contrast of inversion twin boundaries in BeO crystals

Chikawa¹,

Austerman²

1968

J Appl Cryst

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Inversion twin boundaries in BeO crystals (wurtzite structure) can be studied by X-ray topography. They can be regarded as a special kind of stacking fault. The section topograph images of a twin boundary, lying parallel to the c axis, agree well with the theory for a single stacking fault. From the contrast variation of the images for various reflections, it is concluded that the oxygen sublattice on one side of the twin boundary is displaced from that on the other side by 1(1/16)[00111 so that the oxygen layer parallel to the basal plane on one side is located at the center of the oxygen and beryllium layers on the other side. The image contrast in section topographs is very sensitive to the phase shift due to a fault. The phase shift of a few degrees can be detected easily. This sensitivity leads to an accurate structure determination of the inversion twin boundary.

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MEMS Wet-Etch Processes and Procedures

Burns¹

2011

MEMS Reference Shelf

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Etching studies of beryllium oxide crystals

Cited by 10 publications

References 9 publications

Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

Low Leakage Current Metal–Insulator–Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

X-ray diffraction contrast of inversion twin boundaries in BeO crystals

MEMS Wet-Etch Processes and Procedures

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