2011
DOI: 10.1007/978-0-387-47318-5_8
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MEMS Wet-Etch Processes and Procedures

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Cited by 6 publications
(10 citation statements)
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“…The process of wet etching is relatively simple [30,38,39]. Firstly, the substrate is patterned with an etch mask.…”
Section: Wet Etchingmentioning
confidence: 99%
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“…The process of wet etching is relatively simple [30,38,39]. Firstly, the substrate is patterned with an etch mask.…”
Section: Wet Etchingmentioning
confidence: 99%
“…Unlike in dry etching, there is little erosion of the mask during the process, and the thickness is often not critical. Usually, the substrate(s) to be etched are immersed directly in the etchant solution, but spray etching systems are also common [30,38]. The temperature and agitation of the etchant solution must be carefully controlled as the etch rate may depend on these parameters.…”
Section: Wet Etchingmentioning
confidence: 99%
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“…Acid piranha, for example, has been known as a photoresist stripper since at least 1975 [31], and its use is prevalent in the semiconductor industry. Standard operating procedure for acid piranha varies, but typical acid/peroxide ratios are in the range of 2∶1-7∶1 (two to seven parts 99% sulfuric acid to one part 30% hydrogen peroxide) and typical processing temperatures are in the range of 90°C-140°C [32,33]. Optimized piranha-cleaning processes for MLD gratings documented in the open literature have been consistent with these ranges [12][13][14].…”
Section: Acid Piranha Cleaning At Low Temperaturesmentioning
confidence: 90%