Vertically translating prestressed spring supported microelectromechanical shutters can be used as digital spatial light modulators for high speed, efficient transmissive display applications. Prestressed MEMS shutters have been fabricated alongside top gate a-Si:H TFTs using a four mask TFT-MEMS process and active matrix driving has been demonstrated.

Conventional adaptive driving beam headlamps are limited in achieving still higher quantities of switchable pixels by the number of LEDs and movable elements needed. In this paper, it is shown that by integrating an active matrix liquid crystal display module, it is possible to realize fully adaptive high‐resolution headlights without mechanical elements and a finite number of LED with 30 k switchable pixels.

We have developed a four mask top gate a-Si:H based process that allows for the parallel production of TFTs, Schottky diodes and surface MEMS elements on large area glass substrates. Simple electronical and micromechanical devices as well as a complex active matrix driven MEMS display demonstrator have been produced for process verification. Furthermore, the process seems to be feasible for applications like ultrasonic transducers or energy harvesting.

Active matrix shutter type displays consisting of thin film transistors and pre‐stressed micro‐electro‐mechanical elements that were co‐fabricated in simple and robust four or five mask processes exhibit a unique combination of attractive features such as excellent optical characteristics, fast switching time and outstanding operating temperature range.

Active matrix prestressed microelectromechanical shutter displays enable outstanding optical properties as well as robust operating performance. The microelectromechanical systems (MEMS) shutter elements have been optimized for higher light outcoupling efficiency with lower operation voltage and higher pixel density. The MEMS elements have been co‐fabricated with self‐aligned metal‐oxide thin‐film transistors (TFTs). Several optimizations were required to integrate MEMS process without hampering the performance of both elements. The optimized display process requires only seven photolithographic masks with ensuring proper compatibility between MEMS shutter and metal‐oxide TFT process.