Dislocations

Alexander, H.; Teichler, H.

doi:10.1002/9783527621842.ch6

Cited by 12 publications

(17 citation statements)

References 199 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These strain fields will affect the electrical and electronic properties of semiconductors by distorting the local bonding character. Charge transport and recombination may be altered through this effect on the electrostatic potential and via associated Cottrell atmospheres35. GPA is a method for obtaining local phase, which can be directly related to displacement field distorting the lattice fringes in the HRTEM or HAADF-STEM images with respect to the reference lattice36.…”

Section: Resultsmentioning

confidence: 99%

Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface

Sun

Paulauskas

Şen

et al. 2016

Sci Rep

View full text Add to dashboard Cite

Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries using wafer bonding. Atomic-resolution scanning transmission electron microscopy (STEM) of a [1–10]/(110) 4.8° tilt grain boundary reveals that the interface is composed of three distinct types of Lomer dislocations. Geometrical phase analysis is used to map strain fields, while STEM and density functional theory (DFT) modeling determine the atomic structure at the interface. The electronic structure of the dislocation cores calculated using DFT shows significant mid-gap states and different charge-channeling tendencies. Cl-doping is shown to reduce the midgap states, while maintaining the charge separation effects. This report offers novel avenues for exploring grain boundary effects in CdTe-based solar cells by fabricating controlled bicrystal interfaces and systematic atomic-scale analysis.

show abstract

Section: Resultsmentioning

confidence: 99%

Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface

Sun

Paulauskas

Şen

et al. 2016

Sci Rep

View full text Add to dashboard Cite

show abstract

“…In the particular case of dislocations in semiconductors the large body of work by H. Alexander and coworkers pointed out the complexity of the problem [13,14] that may relate to the interaction of dislocations with point defects [15], contributions from core energies [16], or the formation of point defects by moving dislocations [17][18][19]. As a result, quantitative TEM investigations of dislocations exhibit an unusual large data scatter [20] that is commonly of unknown origin.…”

Section: Introductionmentioning

confidence: 99%

Sub-angstrom imaging of dislocation core structures: how well are experiments comparable with theory?

Kisielowski

Freitag²,

et al. 2006

Philosophical Magazine

View full text Add to dashboard Cite

During the past 50 years Transmission Electron Microscopy (TEM) has evolved from an imaging tool to a quantitative method that approaches the ultimate goal of understanding the atomic structure of materials atom by atom in three dimensions both experimentally and theoretically. Today's TEM abilities are tested in the special case of a Ga terminated 30 degree partial dislocation in GaAs:Be where it is shown that a combination of highresolution phase contrast imaging, Scanning TEM, and local Electron Energy Loss Spectroscopy allows for a complete analysis of dislocation cores and associated stacking faults. We find that it is already possible to locate atom column positions with picometer precision in directly interpretable images of the projected crystal structure and that chemically different elements can already be identified together with their local electronic structure. In terms of theory, the experimental results can be quantitatively compared with ab initio electronic structure total energy calculations. By combining elasticity theory methods with atomic theory an equivalent crystal volume can be addressed. Therefore, it is already feasible to merge experiments and theory on a picometer length scale. While current experiments require the utilization of different, specialized instruments it is foreseeable that the rapid improvement of electron optical elements will soon generate a next generation of microscopes with the ability to image and analyze single atoms in one instrument with deep sub Ångstrom spatial resolution and an energy resolution better than 100 meV.

show abstract

“…Experimental data, however, obtained mainly by electron paramagnetic resonance (EPR) spectroscopy refer to a low density of such dangling bonds (Alexander & Teichler, 2000). Dislocations of the glide set reconstruct by dissociation (Heggie & Jones, 1983;Marklund, 1983;Alexander, 1991), while dislocations of the shuffle set, which may exist at high applied shear stress, can stabilized by interaction with vacancies (Li et al 2008).…”

Section: Structure Of Dislocations In Siliconmentioning

confidence: 99%

“…The electrical activity of dislocations in silicon and germanium was studied by numerous methods where mostly plastic deformation was applied to produce defined dislocation arrangements (for instance, Schröter & Cerva, 2002;Alexander & Teichler, 2000). Hall effect measurement was primarily applied to verify the electrical activity of dislocations and to propose first models (Gallagher, 1952;Read, 1954a, b;Schröter & Labusch, 1969).…”

Section: Electronic Properties Of Dislocations In Siliconmentioning

confidence: 99%

“…The present chapter reviews the current understanding about the structure and properties of dislocations in silicon and is based on earlier reviews given for instance by Bulatov et al (1995), Alexander & Teichler (2000), Schröter & Cerva (2002), Spence (2007), and Kveder & Kittler (2008). All these papers demonstrate a substantial progress over the years but show also that a number of problems such as dislocation mobility, structure of the dislocation core, or electronic properties are not completely solved (George & Yip, 2001;Spence 2007).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation