1962
DOI: 10.1063/1.1777147
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Disorder and Oxygen Transport in Cadmium Oxide

Abstract: Oxygen-18 exchange between gaseous oxygen and cadmium oxide crystals has been studied in the temperature range 630° to 855°C. Since isotope equilibrium is not instantaneously established at the crystal surface an appropriate solution for this particular diffusion problem has been given. In this way it is possible to evaluate rate constants (K) of the phase boundary reaction as well as lattice diffusion constants (D): D=3.8·106exp(−92±4/RT);  K=1.3·102exp(−49±11/RT). The influence of the ambient oxygen pressure… Show more

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Cited by 82 publications
(23 citation statements)
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“…Cadmium oxide (CdO), which is metal-oxide-semiconductor is one of the promising materials for realizing optoelectronic devices [19]. Cadmium oxide is an n-type semiconductor due to oxygen vacancies and has rock salt crystalline order [20]. Transparent conducting oxide CdO has a wide application area because of its use in semiconductor optoelectronic device technology [21].…”
Section: Introductionmentioning
confidence: 99%
“…Cadmium oxide (CdO), which is metal-oxide-semiconductor is one of the promising materials for realizing optoelectronic devices [19]. Cadmium oxide is an n-type semiconductor due to oxygen vacancies and has rock salt crystalline order [20]. Transparent conducting oxide CdO has a wide application area because of its use in semiconductor optoelectronic device technology [21].…”
Section: Introductionmentioning
confidence: 99%
“…4 and 6 may involve a diffusion of oxide ions from the surface into the bullr of the adsorbent to fill vacancies in the anion sublattice. Support for this conies from the \vorlr of Haul, Just, and Diimbgen (8,9), who studied the disorder and oxygen transport in cadmium oxide by measuring the 160-180 exchange between gaseous oxygen and cadmium oxide crystals from 630" to 855". Their results furnished strong evidence for a transport mechanism involving vacancies in the anion sublattice.…”
Section: Discussionmentioning
confidence: 99%
“…Rare earth ions have partially filled 4f shells, if incorporated into suitable matrixes, their infra-4f optical transitions become possible because of splitting induced by crystal field of the matrix [22]. Besides, CdO shows very high electrical conductivity even without doping due to the existence of shallow donors caused by intrinsic interstitial cadmium atoms and oxygen vacancies [23]. In previous studies, the synthesis of Sn-doped CdO thin films [24], Bi 3?…”
Section: Introductionmentioning
confidence: 99%