1998
DOI: 10.1103/physrevlett.80.4004
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Disorder Effects in Electronic Structure of Substituted Transition Metal Compounds

Abstract: Investigating LaNi 12x M x O 3 (M Mn and Fe), we identify a characteristic evolution of the spectral function with increasing disorder in the presence of strong interaction effects across the metal-insulator transition. We discuss these results vis-à-vis existing theories of electronic structure in the simultaneous presence of disorder and interaction. [S0031-9007(98)05947-X]

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Cited by 82 publications
(52 citation statements)
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“…The mean hopping distance R h (T) and hopping energy E h (T) at a given temperature T could also be estimated in terms of T 0 and localization length as given by [59] …”
Section: Electrical Conductivity and Transport Propertiesmentioning
confidence: 99%
“…The mean hopping distance R h (T) and hopping energy E h (T) at a given temperature T could also be estimated in terms of T 0 and localization length as given by [59] …”
Section: Electrical Conductivity and Transport Propertiesmentioning
confidence: 99%
“…These plots reveal that the data fit very well with the VRH model in the entire temperature range of measurement, suggesting the conduction to be governed by the disorder induced localization of charge carriers. 17 We also observe that with increase in the Ni concentration, the slope of the curve decreases. This further confirms that Ni substitution in LaFeO 3 decreases the activation energy or overall hopping potential via carrier doping.…”
mentioning
confidence: 58%
“…The carriers in the localized states move by a phenomenon known as variable-range hopping ͑VRH͒. 17 In order to understand the effect of disorder induced localization on the electrical transport behavior, we have fit our data with Mott's VRH model ͑T͒ = 0 exp͑T 0 / T 1/4 ͒ in the measured temperature range of 77 to 300 K. Figure 2͑b͒ shows the ln versus T −1/4 plot for all the samples. These plots reveal that the data fit very well with the VRH model in the entire temperature range of measurement, suggesting the conduction to be governed by the disorder induced localization of charge carriers.…”
mentioning
confidence: 99%
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“…We find that α = 0.5±0.05 provides a good description of the spectra for both CaRuO 3 and SrRuO 3 for BE > 2k B T suggesting an influence of disorder in the electronic structure as also observed in other oxides [15,16]. Interestingly, the full width at half maximum (FWHM) of the Gaussian needed to simulate the experimental spectra is significantly large compared to 1.4 meV expected from the instrument resolution function.…”
mentioning
confidence: 81%