2007
DOI: 10.1103/physrevb.75.144406
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Disorder-induced magnetic memory: Experiments and theories

Abstract: Beautiful theories of magnetic hysteresis based on random microscopic disorder have been developed over the past ten years. Our goal was to directly compare these theories with precise experiments. We first developed and then applied coherent x-ray speckle metrology to a series of thin multilayer perpendicular magnetic materials. To directly observe the effects of disorder, we deliberately introduced increasing degrees of disorder into our films. We used coherent x-rays to generate highly speckled magnetic sca… Show more

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Cited by 69 publications
(82 citation statements)
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“…Controlling field history leads to formation of complex domain morphologies, associated with violation of microscopic return point memory 14,15 . These studies potentially enable new generation of computational and data storage devices.…”
mentioning
confidence: 99%
“…Controlling field history leads to formation of complex domain morphologies, associated with violation of microscopic return point memory 14,15 . These studies potentially enable new generation of computational and data storage devices.…”
mentioning
confidence: 99%
“…Many studies were devoted to the macroscopic and microscopic repeatability of minor and major hysteresis loops and effects of disorder on cycle-to-cycle memory [1,2]. Macroscopically the major loops repeat themselves in successive cycles, however it was appreciated [3,4] that disorder induces memory in the microscopic magnetic domain configurations from one cycle of the hysteresis loop to the next, even when H sat was crossed. Successive minor loops are usually reasonably reproducible, although changes of size and shape were observed [5][6][7].…”
mentioning
confidence: 99%
“…Finally in the 20nm sized dots, the FORC distribution is much broader (Fig. 3c) due to a relatively higher degree of disorders [24,34]. We also observed an abnormal drop in coercivity for the 20 nm sized sample.…”
Section: Experimental Methodsmentioning
confidence: 51%