Disorder-induced zero-bias anomaly in the Anderson-Hubbard model: Numerical and analytical calculations

Chen, Hong Yi; Wortis, Rachel; Atkinson, W. A.

doi:10.1103/physrevb.84.045113

Cited by 8 publications

(9 citation statements)

References 39 publications

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“…To understand this linear dependence on t, it is useful to start from the atomic limit and then consider what happens as hopping is turned on. 4,5,19,20 In the atomic limit, each site contributes to the DOS at, at most, two energies: the site potential ǫ i , and ǫ i +U . It is convenient to refer to these as the lower Hubbard orbital and the upper Hubbard orbital.…”

Section: Resultsmentioning

confidence: 99%

Effect of nonlocal interactions on the disorder-induced zero-bias anomaly in the Anderson-Hubbard model

Chen¹,

Atkinson

Wortis

2012

Phys. Rev. B

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To expand the framework available for interpreting experiments on disordered strongly correlated systems, and in particular to explore further the strong-coupling zero-bias anomaly found in the Anderson-Hubbard model, we ask how this anomaly responds to the addition of nonlocal electronelectron interactions. We use exact diagonalization to calculate the single-particle density of states of the extended Anderson-Hubbard model. We find that for weak nonlocal interactions the form of the zero-bias anomaly is qualitatively unchanged. The energy scale of the anomaly continues to be set by an effective hopping amplitude renormalized by the nonlocal interaction. At larger values of the nonlocal interaction strength, however, hopping ceases to be a relevant energy scale and higher energy features associated with charge correlations dominate the density of states.

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Section: Resultsmentioning

confidence: 99%

Effect of nonlocal interactions on the disorder-induced zero-bias anomaly in the Anderson-Hubbard model

Chen¹,

Atkinson

Wortis

2012

Phys. Rev. B

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“…In contrast, recent exact diagonalization investigations of the Anderson-Hubbard Hamiltonian within the Hartree-Fock approximation by Shinaoka and Imada 56,57 established the existence of a soft Hubbard gap. The physical origin of the zero-bias anomaly was analyzed in more detail by Chen et al 58 pointing out the importance of non-local correlations which are not included in our theory. Please note that in our recent statistical DMFT investigation of fermions in speckle disordered optical lattices 30 we compared results for the Bethe lattice as presented here with results for a finite-size square lattice.…”

Section: Paramagnetic Ground State Phase Diagrammentioning

confidence: 99%

Anderson-Hubbard model with box disorder: Statistical dynamical mean-field theory investigation

2011

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Strongly correlated electrons with box disorder in high-dimensional lattices are investigated. We apply the statistical dynamical mean-field theory, which treats local correlations non-perturbatively. The incorporation of a finite lattice connectivity allows for the detection of disorder-induced localization via the probability distribution function of the local density of states. We obtain a complete paramagnetic ground state phase diagram and find correlation-induced as well as disorderinduced metal-insulator transitions. Our results qualitatively confirm predictions obtained by typical medium theory. Moreover, we find that the probability distribution function of the local density of states in the metallic phase strongly deviates from a log-normal distribution as found for the non-interacting case.

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“…Exact results can be obtained in this case using various numerical methods such as quantum Monte Carlo (for examples, see Refs. 13,14), however usually for very small systems. In any event, proper inclusion of the screening effects, which is necessary if the sample is not highly compensated, may significantly change the results.…”

Section: Resultsmentioning

confidence: 99%

Evolution of the impurity band in a weakly doped, highly compensated semiconductor

Cook

Berciu

2012

Phys. Rev. B

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We study the evolution of the impurity band in a weakly doped semiconductor as a function of the concentration of dopants, x. We present disorder-averaged results for the density of states of a doped simple cubic lattice and compare them with the predictions of the coherent potential approximation (CPA). For randomly distributed impurities the agreement is good, although CPA misses some qualitative features. We find that if electron-electron interactions can be ignored, as is the case in the highly compensated limit, the impurity band is still a clearly distinct feature in the spectrum even for dopant concentrations as large as x ∼ 0.10.

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Disorder-induced zero-bias anomaly in the Anderson-Hubbard model: Numerical and analytical calculations

Cited by 8 publications

References 39 publications

Effect of nonlocal interactions on the disorder-induced zero-bias anomaly in the Anderson-Hubbard model

Effect of nonlocal interactions on the disorder-induced zero-bias anomaly in the Anderson-Hubbard model

Anderson-Hubbard model with box disorder: Statistical dynamical mean-field theory investigation

Evolution of the impurity band in a weakly doped, highly compensated semiconductor

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