are cheap and relatively stable especially for harsh water oxidation conditions but still suffered from low photocurrent and/ or photovoltage due to their narrow light absorption region. On the other hand, silicon is widely employed as an excellent light absorber owing to its small bandgap (E g = 1.1 eV) as well as perfectly matching with the solar spectrum [19][20][21] and high carrier mobility. Nevertheless, silicon has been revealed to suffer from photocorrosion process at the anodic potential and further grow an insulating layer by self-passivation. [22] To address these problems, numerous efforts using transition metals, [23][24][25] thin conductive oxides, [26][27][28][29] or insulators [30,31] as corrosion-resistant protecting layers have been widely explored. In this case, the protection layer can also act as an active electrocatalytic layer that can efficiently facilitate the transfer of charge carriers but would cause significant optical losses because of the thick coating at silicon/electrolyte interface. Therefore, the transition-metal/metal oxides electrocatalysts fabricated as protection layer by thin-film deposition techniques including spin-coating, [32] sputtering, [33] electron beam evaporation, [34] and atomic layer deposition [35] (ALD) that also acted as electrocatalytic layer were widely investigated. Ni-based thin films act as electrocatalysts were widely studied for electrochemical water oxidation because of their earth abundance and low cost. [23,24,36,37] Although various controllable and cheap approaches have been successfully developed to fabricate electrocatalyst onto photoanodes without high-vacuum equipment for ultrathin layer deposition, [23,24,33] only few studies toward Ni-based electrocatalysts were employed for PEC device so far. [38,39] On the other hand, the texture structure of absorbers can be introduced to enhance the light absorption by increasing the surface area, as known as uniform micro/nanowire arrays with consistent aspect ratio or porous surface (black silicon). [10] Compared with flat silicon absorber, the silicon micro/nanostructures can offer a chance to optimize the transposition of charge carriers and/or increase light absorption for efficient solar energy conversion. [21,40,41] Furthermore, controlled fabrications of vertical silicon wire arrays by lithography techniques can provide the opportunities to manipulate the optical nature for photoelectrochemical applications [42] by modifying the aspect ratio as well as reducing the materials usage. Nevertheless, only few reports employed microscale silicon wire as High-aspect-ratio silicon microwire (Si MW) arrays are expected to act as potential absorbers for solar energy conversion due to their excellent optically absorption capability and shorter diffusion length for collecting charge carriers. To date, most of the studies on structured Si microwire arrays devices are focusing on photocathode for the photoelectrochemical hydrogen production, only a handful of reports attempt to use photoanode based on Si micr...