Dispersed VO₂ phases in a flexible sensor for recognizing tensile and compressive stress

Abstract

Stress recognitions have been exploited in flexible sensors, and attracted considerable attention in the fields of electronic skins and intelligent robots towards artificial intelligence. Inspired by human skin, to identify...

Enabling Reconfigurable Resistive Switching via Tailored Multimodal Phase Transition

“…Significantly, various phase change processes will be produced by the regulation of defects or crystalline states in vanadium oxides. For example, different transformation roads may be realized such as M1 to M2 to R phases or M2 to R phases as we previously reported . Such transformation processes could be used to analogize different neurotransmitters.…”

“…For example, different transformation roads may be realized such as M1 to M2 to R phases or M2 to R phases as we previously reported. 32 Such transformation processes could be used to analogize different neurotransmitters. The controllable change in the ratio of M1 and M2 phases in VO 2 indicated diverse conductivity modes, i.e., mode n. Notably, VO 2 with the M2 phase owned much higher transition energy than VO 2 of M1 phase, and T phase exhibited variable V−V chains.…”

“…In general, the coexisted phases can be induced in VO 2 under the electric field, thermal field, or stress. 32 Based on the difference in transition energy thresholds between different phases, we supposed that the M2 phase appeared during the electric heating process, according to our previous work. When we set the I cc in a much lower level, we obtain two types of switching behaviors marked as I and II (Figure 5a).…”

“…As displayed in Figure a, Raman shifts located at 193.5, 224.4, 262.7, 305.3, 339.7 , 395.1, and 614.2 cm –1 indicated the unique vibration modes of VO 2 of the M1 phase. It had been confirmed that Raman mode ω 3 was attributed to the V–O vibration, and the mode around 617.9 cm –1 could be assigned to VO 2 of the M2 phase . X-ray diffraction (XRD) was adopted to verify the crystalline state and lattice structure of these two phases, namely, M1 and mixed M1/M2.…”

Utilizing VO2 as a Hole Injection Layer for Efficient Charge Injection in Quantum Dot Light-Emitting Diodes Enables High Device Performance

“…Our work demonstrates that VO 2 thin films can effectively function as the HIL in QLEDs. VO 2 is a material that undergoes a phase change from insulator to metal at 340 K. , Because of the unique characteristics of VO 2 , its applicability has been proven in various fields such as memory, smart window, logic gate, and sensor. − The proposed bilayer HIL-based QLED (VO 2 and PEDOT:PSS) exhibits a higher external quantum efficiency (EQE) when compared to the PEDOT:PSS-based QLED. A rapid thermal annealing (RTA) technique has been used to fabricate the VO 2 thin film.…”