2002
DOI: 10.1109/lmwc.2002.803188
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Dispersion characteristics of substrate integrated rectangular waveguide

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Cited by 766 publications
(395 citation statements)
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“…As shown in [1], the Equation (1) is valid for D < λ 0 ε r /2 and D < 8R within ±5% precision, where λ 0 and Figure 1. Proposed SIW-DGS cell (top layer).…”
Section: Analysis Of Siw-dgs Cellmentioning
confidence: 55%
See 2 more Smart Citations
“…As shown in [1], the Equation (1) is valid for D < λ 0 ε r /2 and D < 8R within ±5% precision, where λ 0 and Figure 1. Proposed SIW-DGS cell (top layer).…”
Section: Analysis Of Siw-dgs Cellmentioning
confidence: 55%
“…As discussed in [1,2], the characteristic cutoff frequency of the SIW is mainly controlled by its width a in Figure 1. A SIW with a and h, the height of the substrate, can be equivalent to a conventional rectangular waveguide with the same height, h, and width, a EFF SIW , which is shown as…”
Section: Analysis Of Siw-dgs Cellmentioning
confidence: 89%
See 1 more Smart Citation
“…The resonator has a length of L and a width of W . Each via has a diameter of d and is separated from its neighboring by a centerto-center spacing s. The resonance frequency of the TE 110 dominant mode can be determined [18].…”
Section: Ltcc Cavity Resonatormentioning
confidence: 99%
“…Recently a new planar structure which called substrate integrated waveguide (SIW) was proposed [15,16]. SIW is a kind of integrated waveguide structure which is implemented by metallic vias on low loss dielectric substrate through PCB fabrication process [17,18].…”
Section: Introductionmentioning
confidence: 99%