Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications

Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors

“…As already presented [3], LFN spectra measured on pristine devices can be described by two main characteristics: the 1/f noise and shot noise components, and the presence or absence of Generation-Recombination component(s) (G-R), presented by Lorentzian spectra, associated with a trapping/de-trapping process. An example is given in After irradiation, depending on several parameters (TID, bias current, and geometry), several behaviors have been observed, making LFN analysis quite complex.…”