Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Betz, Andreas; Wacquez, R.; Vinet, M.; Jehl, X.; Saraiva, André; Sanquer, M.; Ferguson, A. J.; González-Zalba, M. Fernando

doi:10.1021/acs.nanolett.5b01306

Cited by 76 publications

(93 citation statements)

References 41 publications

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“…Corner state quantum dots in Si nanowire transistors have been reported for different single and double gate topologies [9][10][11] and using both quantum dots and dopants [12]. In our novel quadruple gate configuration, we first of all confirm the creation of a single QD under a top-gate using gate G 1 as an example.…”

supporting

confidence: 52%

“…We characterise one exemplary single QD and demonstrate that different DQD configurations can be set at will. Building on previous demonstrations [10][11][12] results provide a way to scale up CMOS quantum information architectures and to create reconfigurable silicon multi-dot arrangements. The device presented here is a fully depleted silicon-oninsulator (FDSOI) nanowire field-effect transistor with four independently addressable top-gates.…”

mentioning

confidence: 62%

“…We characterise one exemplary single QD and demonstrate that different DQD configurations can be set at will. Building on previous demonstrations [10][11][12] silicon top-gates of length L = 40 nm are arranged around the sides of a 82 nm × 82 nm square at 45 • with respect to transport direction as shown in white dashes in the scanning electron micrograph of a similar device in Fig.1(a). Gate-to-gate distances are S G1−G2 = S G2−G3 = 30 nm, and the channel width W is 87 nm.…”

mentioning

confidence: 99%

“…Each top-gate wraps around two faces of the intrinsic channel and is separated from the other top-gates by the Si 3 N 4 spacers and from the channel by 5 nm of SiO 2 [15]. A quantum dot can be created under each gate at the top-most corners of the channel due to the so-called corner effect [10,11,16]. Each QD is controlled by its respective gate voltage V g(x) , while a global backgate voltage V bg may be applied through the Si substrate.…”

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confidence: 99%

“…Moreover, this approach can readily be extended to a larger number of gates providing a 1-D line of QDs and DQDs,while remaining compact by further integrating high-sensitivity gatebased reflectometry readout [10,11]. The versatility of the corner state QD structure allows to use the gate-based sensing either for in-situ readout, but also for conventional charge sensing using an rf-single electron box for detection.…”

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confidence: 99%

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Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Betz

Tagliaferri

Vinet

et al. 2016

Applied Physics Letters

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We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.Semiconductor quantum bits relying on the charge or spin degree of freedom of a single electron, bound to a quantum dot (QD) or impurity atom, are considered promising candidates for the base elements of solid state quantum computing architectures [1]. Building a successful quantum computer, however, requires a scalable multi-qubit approach to implement the necessary algorithms [2]. Electron spins bound to silicon QDs are seen as promising candidates for this due to their long coherence time, electrical tunability and flexible coupling geometries [3][4][5]. A further advantage of using Si is the possibility to integrate with current complementary-metaloxide-semiconductor (CMOS) technology [5-8] and leverage its established industrial platform for large scale circuits. Recently, the integration of Si quantum dots and double quantum dots (DQD) into CMOS technology has been taken a step further with reports of fewelectron QDs, DQDs, and donor-QD hybrids created within industry-standard Si nanowire transistors [9][10][11][12]. Combined with a gate-based readout scheme that alleviates the need for a separate charge sensor [10-14] these approaches pave the way towards a large scale quantum computing architecture based on current CMOS technology.In this Letter, we report on a reconfigurable QD and DQD system in a quadruple-gate CMOS transistor. It incorporates one, or a pair, of CMOS corner state quantum dots [10,11] in a variety of configurations. Each of the four gates can host an independently tunable quantum dot created in the square channel by electrostatic enhancement and confinement resulting from the topgate electrodes and accompanying silicon nitride spacers. We characterise one exemplary single QD and demonstrate that different DQD configurations can be set at will. Building on previous demonstrations [10][11][12] results provide a way to scale up CMOS quantum information architectures and to create reconfigurable silicon multi-dot arrangements. The device presented here is a fully depleted silicon-oninsulator (FDSOI) nanowire field-effect transistor with four independently addressable top-gates. The polyarXiv:1603.03636v1 [cond-mat.mes-hall]

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confidence: 52%

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confidence: 62%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Betz

Tagliaferri

Vinet

et al. 2016

Applied Physics Letters

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Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Saraiva

Lim

Yang

et al. 2021

Adv Funct Materials

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Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate‐defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know‐how for fabricating densely populated chips with nanoscale electrodes. The sophisticated material combinations used in commercially manufactured transistors, however, will have a very different impact on the fragile qubits. Here some key properties of the materials that have a direct impact on qubit performance and variability are reviewed.

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Radio-Frequency Capacitive Gate-Based Charge Sensing for Semiconductor Quantum Dots

Ahmed

González-Zalba

2020

Micro and Nano Machined Electrometers

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We present a comprehensible introduction to capacitive gate-based sensing, a technique for charge state readout of gate-defined semiconductor quantum dots. The objective of this chapter is to introduce the reader to the fundamental concepts necessary to understand the technique from a theoretical perspective and to be able to apply the method experimentally. We aimed to maintain a pedagogical tone with necessary rigour to keep it accessible and self-contained. We start by introducing the fundamentals of single-electron effects in single and double quantum dots i.e. Coulomb blockade. We use the constant interaction model and the effect of quantum confinement with a focus on explaining the electrical impedance of these systems under direct current excitation. We then explain how these properties are modified under the effect of an electrical excitation at high-frequency. More particularly, we focus on the appearance of a new component to the impedance, the so-called parametric capacitance when single-electrons tunnels back and forth between stable charge states because of the effect of the drive. We show how the parametric capacitance is composed by two physically distinct terms, the quantum capacitance and the tunneling capacitance, associated to adiabatic and non-adiabatic tunneling processes, respectively. In the second part of this chapter, we introduce the experimental technique. We show how embedding the devices in a high-Q lumpedelement LC resonator can be used to probe the parametric capacitance of the system. We first present the fabrication technique of superconducting niobium nitride (NbN) spiral inductors and how these can be used in conjunction with the devices to construct high-Q resonators at radio-frequencies (rf). We show how the resonator can be characterized and optimized for optimum sensitivity of the charge state of the quantum dot system. Finally, we present an experimental demonstration of rf capacitive gate-based sensing utilizing a NbN inductor coupled to the gate of a silicon nanowire field effect transistor. Coulomb blockade manifest in these devices at

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Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Cited by 76 publications

References 41 publications

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Radio-Frequency Capacitive Gate-Based Charge Sensing for Semiconductor Quantum Dots

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