Displacement current and trapping mechanisms of electric charges in TiO/sub 2/-rutile

Abstract

The Scanning Electron Microscopy Mirror Effect (SEMME) and the Induced Current Measurement (ICM) have been used to characterize insulators. The application of these methods to a semiconducting material of wide band gap (TiOZ) reveals that the material presents a great leakage surface current and high anisotropy of dilectric properties. The goal of the present communication is to understand and study such a behaviour.

Control of a Surface Photochemical Process by Fractal Electron Transport Across the Surface: O2 Photodesorption from TiO2(110)

“…This takes place through favorable overlap of the interconnected filled orbitals along one of the orthogonal crystallographic axes on the surface. Confirmation of this observation awaits more detailed studies of the anisotropic effects in the surface conductivity of the defective TiO 2 (110) surface …”