Displacement damage degradation of ion-induced charge in Si pin photodiode

Onoda, Shinobu; Hirao, Toshio; Laird, J.S.; Mori, Hidenobu; Itoh, Hisayoshi; Wakasa, Takeshi; Okamoto, Tsuyoshi

doi:10.1016/s0168-583x(03)00790-0

Cited by 20 publications

(6 citation statements)

References 7 publications

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“…The reverse current of the pn junction is enlarged thereafter. A similar effect has been reported in diodes in References [16][17][18]. Another possibility is that the reverse current may be enlarged by the tunnel current from drain to body, which is reasonable considering the additional energy levels in the bandgap.…”

Section: Resultssupporting

confidence: 77%

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

Tan

et al. 2015

J. Semicond.

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The effects of the physical damages induced by heavy ion irradiation on the performance of partially-depleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance, and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.

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Section: Resultssupporting

confidence: 77%

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

Tan

et al. 2015

J. Semicond.

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“…We have made in [11] the comparison between the results of our models and experimental measurements obtained from [21,22]. The results show a very acceptable concordance.…”

Section: Physical Modelmentioning

confidence: 84%

Radiation-damaged simulation PIN photodiodes

Cappelletti

Urcola

Blancá

2006

Semicond. Sci. Technol.

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The physical processes taking place in PIN photodiodes exposed to spatial radiation have been investigated in the infrared band. The modelling and simulation of the diodes was done by means of numerical algorithms using the coupled Poisson and continuity equation to obtain the behaviour of electronic devices. The effects of the radiation studied were atomic displacement damages. The present work aims at a comparison of the behaviour of differently constructed PIN photodiodes after exposure to 10 MeV protons and 1 MeV neutrons having fluences in both cases in the range of 1 × 10 13 to 2.5 × 10 14 particle cm −2 . We have also included in our simulation the effects produced by the light illumination on the photodiodes; in this case the intensities used ranged from 0 to 2 mW cm −2 . We have obtained as a result of our research one expression that relates the total reverse current and the incident radiation.

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“…10-60 keV energy H + , He + , N + , Ne + and Ar + ions on an unbiased Si photodiode, originally with 100% internal CCE, resulted in an exponential decrease with U [19]; a PIPS detector irradiated with 4 MeV He + -ions under 60 V operating bias showed a linear decrease up to 4 Â 10 10 ion/cm 2 fluence [20], another PIPS detector behaved similarly for 2 MeV protons [21]; a Si pin photodiode biased with 10 V exhibited non-linear dependence when irradiated with up to 6 Â 10 10 and 6 Â 10 12 ion/cm 2 fluence of 1 MeV He 2+ and 2 MeV H þ 2 ions, respectively [2]. Others found a linear increase of 1/CCE with fluence under very different conditions [22][23][24].…”

Section: Peak Centroid Position [Kev]mentioning

confidence: 93%