Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors

Virmontois, Cédric; Goiffon, Vincent; Corbière, Franck; Magnan, Pierre; Girard, Sylvain; Bardoux, A.

doi:10.1109/tns.2012.2224129

Cited by 40 publications

(29 citation statements)

References 19 publications

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“…The dark current increase, due to proton irradiation, is analyzed and compared to the universal damage factor [16] in order to emphasize the displacement damage contribution. Particular attention is given to dark current distributions where peaks related to dark current spectroscopy [17] appear, as previously observed in CMOS imagers [18]. Dark Current Random Telegraph Signal (DC-RTS) is also investigated and compared to previous results [19].…”

Section: Introductionmentioning

confidence: 87%

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Virmontois

Toulemont

Rolland

et al. 2014

IEEE Trans. Nucl. Sci.

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This paper focuses on radiation-induced dose and single event effects in digital CMOS image sensors using pinned photodiodes. Proton irradiations were used to study cumulative effects. As previously observed, the dark current is the main electrical parameter affected by protons. The mean dark current increase appears proportional to Srour's universal damage factor. Therefore, the degradation is mainly attributed to displacement damage in the pinned photodiode. Heavy ion tests are also reported in this work. This study focuses on single event effects in digital CMOS imagers using numerous electronic functions such as column ADCs, a state machine and registers. Single event transients, upsets and latchups are observed and analyzed. The cross sections of these single events are transposed to specific space imaging missions in order to show that the digital functions can fit the mission requirements despite these perturbations. Index Terms-Active pixel sensor (APS), CMOS image sensor (CIS), displacement damage () dose , monolithic active pixel sensor (MAPS), pinned photodiode (PPD), random telegraph signal (RTS), single event effects (SET), total ionizing dose (TID).

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Section: Introductionmentioning

confidence: 87%

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Virmontois

Toulemont

Rolland

et al. 2014

IEEE Trans. Nucl. Sci.

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“…These defects act as classical Shockley-Read-Hall (SRH) generation center and contribute to the dark signal increase, which becomes a generation current (activation energy between 0.56 and 1.12 eV). 15 The high activation energies are attributed to the variation of impurity level in the silicon band-gap. 18 When the activation energy decreases and reaches almost mid-gap value, the highest dark signal value shown as a dark signal spike appears in the pixel.…”

Section: A Mean Dark Signalmentioning

confidence: 99%

“…14 Displacement damage caused by energetic particles such as protons or neutrons induces stable bulk traps with energy levels within the band-gap, which can lead to the degradation in many electronic devices. Virmontois et al have presented an investigation of displacement damage effects on CMOS image sensors manufactured in pinned photo diodes (PPD) 15 and deep submicron technology (DSM). 11,12 Zucca et al have discussed the characterization of bulk damage in CMOS MAPS with deep N-well collecting electrode.…”

Section: Introductionmentioning

confidence: 99%

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

et al. 2014

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The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 μm CMOS technology. The flux of neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed by 1 MeV neutron equivalent-fluence of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal spike, dark signal non-uniformity (DSNU), noise (VN), saturation output signal voltage (VS), and dynamic range (DR) versus neutron fluence are investigated. The degradation mechanisms of CMOS APS image sensors are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from CMOS APS image sensors irradiated by neutrons are presented to investigate the generation of dark signal spike.

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“…These defects act as classical Shockley-Read-Hall (SRH) generation centre and contribute to the dark signal increase which becomes a generation current. 18,19 Neutron irradiation can cause permanent damage in CCDs. Dark signal due to displacement damage arises from thermal generation of carriers in bulk space charge region (bulk depleted region) via energy levels near midgap.…”

Section: A Mean Dark Signal Increasementioning

confidence: 99%

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

et al. 2014

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The experiments of reactor neutron irradiation which induce dark signal increase in COTS array CCDs are presented. The flux of the reactor neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed to 1MeV neutron-equivalent fluences of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal non-uniformity (DSNU), and dark signal spikes (hot pixels) versus neutron fluence are investigated. The degradation mechanisms of the dark signal in CCDs are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from the CCDs irradiated by neutrons are presented to investigate the generation of dark signal spike. The 1D and 2D figures which show the output signal voltage of pixels in dark images irradiated by different neutron beam fluences, are presented to compare the degradation of KD, DSNU, and dark signal spike.

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Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors

Cited by 40 publications

References 19 publications

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

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