Displacement damage effects on the forward bias characteristics of SiC Schottky barrier power diodes

Harris, R.D.; Frasca, Albert J.; Patton, Martin O.

doi:10.1109/tns.2005.860730

Cited by 30 publications

(21 citation statements)

References 8 publications

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“…This behavior is associated with conduction resistance increase, due to the generation of radiation-induced defects. For the case of Schottky diodes with unipolar conduction, the increase in series resistance has been correlated with a decrease in the effective dopant density, due to carrier removal or doping compensation [31], [32]. In the case of p-n junction diodes, with bipolar conduction, a similar ON-resistance increase after electron irradiation has been recently reported [33].…”

Section: A I -V Characteristicsmentioning

confidence: 76%

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Rafı́

Pellegrini

Godignon

et al. 2020

IEEE Trans. Nucl. Sci.

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Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagnostic systems in future nuclear fusion reactors. In this work, four-quadrant p-n junction diodes produced on epitaxial 4H-SiC substrates are studied. The impact of electron, neutron, and proton irradiations (up to fluences of 1 × 10 16 electrons (e)/cm 2 , 2 × 10 15 neutrons (n)/cm 2 , and 2.5 × 10 15 protons (p)/cm 2 , respectively) on the electrical characteristics is studied by means of current-voltage (I-V) and capacitance-voltage (C-V) techniques. Regardless of the particle type and applied fluences, the results show similar low reverse currents for irradiated SiC devices, which are at least about four orders of magnitude lower than comparable Si devices. The effects of irradiation on interquadrant resistance and charge build-up in the interquadrant isolation are assessed. Furthermore, device performance as a radiation detector is investigated upon exposure to a collimated 239 Pu-241 Am-244 Cm trialpha source. The performance at room temperature is preserved even for the highest irradiation fluences, despite the fact that the rectification character in electrical characteristics is lost. From the results, advantages of using SiC devices in alpha particle detection in harsh environments can be envisaged.

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Section: A I -V Characteristicsmentioning

confidence: 76%

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Rafı́

Pellegrini

Godignon

et al. 2020

IEEE Trans. Nucl. Sci.

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“…The behaviour of irradiated 650 V and 1200 V SiC diodes was found to be similar: degradation after 7×10 12 n/cm 2 is very small, while larger damage is detected after the highest fluence (in particular, for currents above 0.1 A). We found that I-V curves of both 650 V and 1200 V SiC diodes before irradiation and after a fluence of 7×10 12 n/cm 2 can be well described by the standard model of an ideal diode with a series resistance [37]:…”

Section: B Diodesmentioning

confidence: 87%

Radiation Testing of Optical and Semiconductor Components for Radiation-Tolerant LED Luminaires

Floriduz¹,

Devine²

2020

Preprint

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An irradiation campaign was conducted to provide guidance in the selection of materials and components for the radiation hardening of LED lights for use in CERN accelerator tunnels. This work describes the effects of gammarays on commercial-grade borosilicate, fused quartz, polymethylmethacrylate, and polycarbonate samples up to doses of 100 kGy, to qualify their use as optical materials in rad-hard LED-based luminaires. In addition, a Si bridge rectifier and a SiC Junction Barrier Schottky diode for use in power supplies of rad-hard LED lighting systems are tested using 24 GeV/c protons. The physical degradation mechanisms are discussed for each element.

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“…where C is a constant that depends on the relationship between dopant density and resistivity and on the diode geometry, ND is the dopant density [5].…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, radiation induced defects in 4H-SiC promote interaction electrically with dopand, leading to its deactivation and finally reduce of free-carrier concentration. In turn, it Yusof Abdullah et al, 2018 contributes to the decrease of the leakage current in reverse bias [5]. The increasing of series resistance is also related to the free carrier deactivation.…”

Section: Fig 3 Relation Between Series Resistance Rs and Radiation Dosementioning

confidence: 98%

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Impact of High Electron Radiation on Electrical properties of 4H-Silicon Carbide Schottky Diodes

Abdullah¹,

Hasbullah²,

Ganiyev³

et al. 2018

IJCRSET

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In this work, investigates of the electron irradiation effects on the electrical characteristics of 4H-SiC Schottky diodes has been done. Commercial 4H-SiC Schottky diodes were electron irradiated with the dose of 6 MGy, 9 MGy, 12 MGy and 15 MGy using EPS-3000 electron beam machine. Electrical characterization of post irradiation diodes showed that the forward bias (FB) current decreased while reverse bias (RB) leakage current increased. The series resistance was also increased as well as the electron fluence increased. The increases of resistance indicated that the RB leakage current was increased. It was believed that both electron-induce displacement and the formation of generation-recombination (G-R) centres as the cause of the carrier density decreased.

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Displacement damage effects on the forward bias characteristics of SiC Schottky barrier power diodes

Cited by 30 publications

References 8 publications

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Radiation Testing of Optical and Semiconductor Components for Radiation-Tolerant LED Luminaires

Impact of High Electron Radiation on Electrical properties of 4H-Silicon Carbide Schottky Diodes

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