Displacement damage equivalent to dose in silicon devices

Dale, C.J.; Marshall, P.W.; Summers, G.P.; Wolicki, E. A.; Burke, E.A.

doi:10.1063/1.100949

Cited by 29 publications

(12 citation statements)

References 6 publications

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“…By extending the NIEL calculation to treat protons in InGaAs, we further develop the capability for predicting damage to these materials in space as reported in [15,16,17]. To justifjr our approach, we present the first experimental data to confirm the displacement damage proton energy dependence in the important category of III-V semiconductor materials.…”

Section: Introductionmentioning

confidence: 92%

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Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

Marshall

Dale

Burke

1992

IEEE Trans. Nucl. Sci.

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especially well suited for orbital applications, The results of the first orbital fiber transmission experiments aboard the We report energydependent proton and Cod0 test LDEF satellite have recently been reported [l]. Also, NASA results and analysis assessing performance of In,,,Gao,,As has space qualified the MIL-STD-1773 1 megabit per second photodetectors and In,, ,,Ga, BAso 6,Po 39 laser diodes for WPS) fiber based data bus [21 which is designed P r i m l y satellite applications. Displacement damage degradation in for telemetry and control applications. Radiation tests have calculations of the nonionizing energy loss (NIEL) for m~s f u l l y on board *e solar malou lo us and technique for evaluating displacement damage in orbit. For the first time, data are presented confirming the proton energy dependence of NIEL in a 111-V material over the effects in optmlectronic devices due to total dose and ionization transients. the Inphotdemor is interpreted using DLTS. New been reported on this system 131, and it is menfly operating protons in Inallow damage assessment using a general Magnetosphefic Particle Explorer ( S M E W satellite launched On "y 1992. Past emphasis on radiation effects in optoelectronic environments with displacement damage from neutrons and photocurrent transients being key concerns. Several studies [4-71 have addressed these effects in GaAs LED sources andSi and GaAs photodetectors for application at the 850 nm wavelength. Some attention has also been given to injection laser diode response at that same wavelength, but the LED was emphasized in those studies due to its simplicity and superior reliability.energy range of interest for spacecraft. we also discuss devices have focused on survivability in weapo~ls

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Section: Introductionmentioning

confidence: 92%

“…The general analom between NIEL for displacement damage and stopping power for ionization effects has been described [15,17], each being expressed as an energy loss rate (e.g. keVcm2/g).…”

Section: Prediction Of In Orbit Performancementioning

confidence: 99%

Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

Marshall

Dale

Burke

1992

IEEE Trans. Nucl. Sci.

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“…The resulting defects can be a point defect 14 or a large combination of points defects, called cluster of defects. 15 Similarly to TID, the amount of energy a particle deposit in silicon by displacing atoms can be quantified 16,17 by the displacement damage dose (DDD). 4 summarizes these radiation damages in MOS devices by showing that TID effects (trapped charges and interface states) are located in the IC oxides whereas displacement damages lead to bulk defects.…”

Section: Radiation Induced Damages In Mos Devicesmentioning

confidence: 99%

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes

et al. 2010

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This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0.18 μm CMOS processes dedicated to imaging. These results are compared to irradiated commercial sensor test results provided by the Jet Propulsion Laboratory to enlighten the differences between standard and pinned photodiode behaviors. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current but some quantum efficiency and MOSFET characteristics changes were also observed at higher dose than those of interest for space applications. In all these degradations, the trench isolations play an important role. The consequences on radiation testing for space applications and radiation-hardening-by-design techniques are also discussed.

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“…A reasonable method of assessing this is to make use of displacement damage dose. Displacement damage dose was first proposed by Dale, et al [16] and has been used extensively in areas such as photovoltaics [17]. It is completely analogous to the ionization dose and represents the damage energy per unit target mass.…”

Section: Nuclear Interactionsmentioning

confidence: 99%

Alpha particle nonionizing energy loss (NIEL)

Jun

Xapsos

Burke

2004

IEEE Trans. Nucl. Sci.

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A method previously developed for proton nonionizing energy loss (NIEL) calculations was extended to alpha particles. The alpha particle NIELs for representative device materials are presented from the damage threshold energy to 1 GeV/n. The method used the Ziegler, Biersack, Littmark (ZBL) screened potential for Coulomb interactions and the MCNPX "thin target approximation" for nuclear interactions. The alpha NIEL obtained in this study was compared to the proton NIEL from the previous study. It is seen that for silicon, the NIEL for alphas is about 16 times the NIEL for protons at 1.0 MeV/n where the Coulombic interaction dominates. The ratio drops at higher energies because of the nuclear contributions. Furthermore, a simple radiation transport analysis indicates that in a representative space environment, the contribution of alphas to the damage dose can be comparable to the proton contribution, and that shielding has a marked influence on the relative contributions.Index Terms-MCNPX, nonionizing energy loss (NIEL), ZBL screened Coulomb potential.

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Displacement damage equivalent to dose in silicon devices

Cited by 29 publications

References 6 publications

Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes

Alpha particle nonionizing energy loss (NIEL)

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