Alpha particle nonionizing energy loss (NIEL)

Jun, I.; Xapsos, M.A.; Burke, E.A.

doi:10.1109/tns.2004.839150

Cited by 22 publications

(6 citation statements)

References 15 publications

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“…In the cross-section term, E d values of 20, 7, 10, and 9 eV are assumed for Al, In, Ga, and P, respectively. 13,15,17) The NIEL value of Al 0.25 Ga 0.25 In 0.5 P, calculated using the assumed E d values, is shown in Fig. 1.…”

Section: Resultsmentioning

confidence: 99%

Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

Okuno

Ishikawa

Akiyoshi

et al. 2020

Jpn. J. Appl. Phys.

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Performance degradation prediction for space solar cells under irradiation with low-energy electrons is greatly affected by displacement threshold energy (Ed) when a displacement damage dose (DDD) model is used. According to recent studies, the Ed of P atoms is much lower than the conventional Ed value in InP-type solar cells irradiated with low-energy electrons. This indicates that the value of Ed typically used in DDD model leads to significant error in performance degradation prediction. In this study, degradation of AlInGaP solar cells is observed after irradiation with 60–500 keV electrons. The results suggest that the Ed of P atoms in AlInGaP solar cells is much smaller than the conventionally used Ed value. By using the DDD model with the Ed value obtained in this study (Ed = 3.5 eV for P), we demonstrated that the performance degradation predicted by the DDD model agrees well with the experimental results.

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Section: Resultsmentioning

confidence: 99%

Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

Okuno

Ishikawa

Akiyoshi

et al. 2020

Jpn. J. Appl. Phys.

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“…Although a variety of irradiation levels were used, we only consider the 12.5 MeV data with an irradiation level of 2× 10 10 protons cm À2 . The NIEL factor for 12.5 MeV protons is 8:9 × 10 À3 MeV g À1 cm À2 proton À1 (Jun et al 2004). Thus, the 2 × 10 10 protons cm À2 flux of 12.5 MeV protons used to irradiate the CCDs corresponds to 1:78 × 10 10 MeV g À1 (Si,) a total dose equivalent to 10 solar cycles at 95% CL, using the SPENVIS approximation detailed here, or 110 yr at L2.…”

Section: Irradiation In the Lab To Simulate Space Radiationmentioning

confidence: 97%

The Effects of Charge Transfer Inefficiency (CTI) on Galaxy Shape Measurements

Rhodes¹,

Leauthaud²,

Stoughton³

et al. 2010

Publications of the Astronomical Society of the Pacific

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ABSTRACT. We examine the effects of charge transfer inefficiency (CTI) during CCD readout on the demanding galaxy shape measurements required by studies of weak gravitational lensing. We simulate a CCD readout with CTI such as that caused by charged particle radiation damage in space-based detectors. We verify our simulations on real data from fully depleted p-channel CCDs that have been deliberately irradiated in a laboratory. We show that only charge traps with time constants of the same order as the time between row transfers during readout affect galaxy shape measurements. We simulate deep astronomical images and the process of CCD readout, characterizing the effects of CTI on various galaxy populations. Our code and methods are general and can be applied to any CCDs, once the density and characteristic release times of their charge trap species are known. We baseline our study around p-channel CCDs that have been shown to have charge transfer efficiency up to an order of magnitude better than several models of n-channel CCDs designed for space applications. We predict that for galaxies furthest from the readout registers, bias in the measurement of galaxy shapes, Δe, will increase at a rate of ð2:65 AE 0:02Þ × 10 À4 yr À1 at L2 for accumulated radiation exposure averaged over the solar cycle. If uncorrected, this will consume the entire shape measurement error budget of a dark energy mission surveying the entire extragalactic sky within about 4 yr of accumulated radiation damage. However, software mitigation techniques demonstrated elsewhere can reduce this by a factor of ∼10, bringing the effect well below mission requirements. This conclusion is valid only for the p-channel CCDs we have modeled; CCDs with higher CTI will fare worse and may not meet the requirements of future dark energy missions. We also discuss additional ways in which hardware could be designed to further minimize the impact of CTI.

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“…It has been pointed out [8] that NIEL can be incorporated into Monte Carlo transport codes to estimate the displacement damage effects. The Monte Carlo code SRIM [9], which describes ionization and displacement damage interactions for all positive ions over a wide range of energies and for a large number of elements and compounds, can be used to fill blanks in the existing tabulations of NIEL.…”

Section: Introductionmentioning

confidence: 99%

Phonon contribution to nonionizing energy loss in silicon detectors

Yang

et al. 2015

Chinese Phys. C

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Nonionizing energy loss (NIEL) has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects, neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons, has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles. NIEL is proportional to the equivalent irradiation fluence that the detector has received.

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Alpha particle nonionizing energy loss (NIEL)

Cited by 22 publications

References 15 publications

Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

Degradation prediction using displacement damage dose method for AlInGaP solar cells by changing displacement threshold energy under irradiation with low-energy electrons

The Effects of Charge Transfer Inefficiency (CTI) on Galaxy Shape Measurements

Phonon contribution to nonionizing energy loss in silicon detectors

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