1998
DOI: 10.1021/jp982313a
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Dissociative Multiple Ionization following Valence, Br(3d), and Si(2p) Inner Shell Photoexcitation of SiBr4 in the Range of 30−133 eV

Abstract: The photoionization of SiBr4 in the valence shell, and the Br(3d) and Si(2p) inner shell excitation/ionization regions, has been studied by using a time-of-flight mass spectrometer and synchrotron radiation over the range 30−133 eV. The photoionization efficiency curve of SiBr4 has been recorded as a function of the incident photon energy. Dissociation processes of SiBr4 have also been investigated by photoelectron−photoion coincidence and photoion-photoion coincidence (PIPICO) techniques. Various monocations … Show more

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Cited by 11 publications
(7 citation statements)
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“…The discrepancy between theory and experiment may reflect that the HF/6-311++G(2df,p) calculation may greatly underestimate the term values corresponding to the transition, although the Si(2p) electrons cannot efficiently screen the nuclear charge owing to the extensive d character. It is shown in previous literature that the term values determined by the configuration interaction calculation match better with experiment than do those determined by the HF calculation. , However, it should be pointed out that calculated term values suppose two separate calculations, one of the initial state and one of the final state, and therefore our simple calculation of virtual orbital energies by using the EICVOM theory could only help to assign the discrete excitation states.
2 Total photoion−photoion yield curve of H 2 Si(CH 3 ) 2 in the range of 65−133 eV.
…”
Section: Resultsmentioning
confidence: 70%
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“…The discrepancy between theory and experiment may reflect that the HF/6-311++G(2df,p) calculation may greatly underestimate the term values corresponding to the transition, although the Si(2p) electrons cannot efficiently screen the nuclear charge owing to the extensive d character. It is shown in previous literature that the term values determined by the configuration interaction calculation match better with experiment than do those determined by the HF calculation. , However, it should be pointed out that calculated term values suppose two separate calculations, one of the initial state and one of the final state, and therefore our simple calculation of virtual orbital energies by using the EICVOM theory could only help to assign the discrete excitation states.
2 Total photoion−photoion yield curve of H 2 Si(CH 3 ) 2 in the range of 65−133 eV.
…”
Section: Resultsmentioning
confidence: 70%
“…Hence, the transitions below 106.51 eV are attributed to the discrete excitation of the Si(2p) core electron to the unoccupied antibonding and Rydberg orbitals. Previous studies show that the excitation of Si(2p) core electron to the first antibonding orbital occurs when the incident photon energy reaches ≈ 103 eV, the energy being more or less shifted with different ligands. , Chemical shifts of photoelectron and Auger lines are linearly dependent on the average differences in Pauling's electronegativities to the nearest neighbors, Δχ P .…”
Section: Resultsmentioning
confidence: 99%
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“…In recent years, the coincidence techniques have been applied to explore the excited states of several systems. Using the PEPICO method, ionization processes of rare gases, CF 4 , CH 3 , N 2 , CF 3 Br, SiCl 4 , C 4 F 8 , and even some clusters have been recently studied. Several small molecules, for example, H 2 , Br 2 , CO 2 , OCS, have been studied by PIPICO technique, whereas photoionization of CS 2 , NO 2 , SO 2 , and CH 3 I has been successfully investigated by PEPIPICO method …”
Section: Introductionmentioning
confidence: 99%