Dissolution of Electrically Inactive Phosphorus by Low Temperature Annealing

Dastgheib-Shirazi, Amir; Peral, Ana; Steyer, M.; Rinder, Johannes; Wagner, Hannes; Hahn, Giso

doi:10.1016/j.egypro.2015.07.040

Cited by 8 publications

(2 citation statements)

References 10 publications

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“…Q f was set to + 3.5•10 12 q/ cm 2 as measured at the sample rear side in Table 1. To achieve simulated values of J 0 similar to those measured in the (n + pn + ) sample before sample treatment, an additional SRH recombination had to be added to the emitter, representing recombination, e.g., due to inactive P [37] or surface-near damage induced by sample processing [38].…”

Section: Device Simulationsmentioning

confidence: 99%

Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions

Sperber

Schwarz

Herguth

et al. 2018

Solar Energy Materials and Solar Cells

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Significant surface related degradation (SRD) is observed in samples passivated with either SiN x :H or AlO x :H/ SiN x :H during treatment at 150°C and 1 sun equivalent illumination intensity. Degradation of SiN x :H passivation is caused by a decrease of chemical passivation quality whereas degradation of AlO x :H/SiN x :H is caused by a decrease of fixed charge density. SRD is, however, strongly suppressed on highly doped silicon surfaces resulting from a diffusion step. Device simulations indicate that this cannot only be explained by reduced sensitivity to changes at the silicon surface due to the diffused region, and implications for defect formation are discussed.

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Section: Device Simulationsmentioning

confidence: 99%

Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions

Sperber

Schwarz

Herguth

et al. 2018

Solar Energy Materials and Solar Cells

Self Cite

View full text Add to dashboard Cite

show abstract

“…It must also be noted that an additional benefit of a low temperature anneal comes from a reduction in the emitter saturation current density as compared to a process without annealing, as has been shown recently in [13]. This paper deals with the consequences of an extended co-firing step on solar cell performance.…”

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confidence: 99%