2015
DOI: 10.1007/s00339-015-9201-5
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Distinction between amorphous and crystalline silicon by means of electron energy-loss spectroscopy

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Cited by 5 publications
(6 citation statements)
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“…This is consistent with the disordered atomic arrangement in amorphous diamond. We find a similar phenomenon when comparing the EELS patterns of crystalline and amorphous Si 24 . These results provide further evidence that amorphous diamond synthesized in this study is tetrahedrally sp 3 bonded.…”
Section: Resultssupporting
confidence: 73%
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“…This is consistent with the disordered atomic arrangement in amorphous diamond. We find a similar phenomenon when comparing the EELS patterns of crystalline and amorphous Si 24 . These results provide further evidence that amorphous diamond synthesized in this study is tetrahedrally sp 3 bonded.…”
Section: Resultssupporting
confidence: 73%
“…Their absence in the EELS of amorphous diamond is further evidence of the disordered atomic arrangement in amorphous diamond. We find a similar phenomenon when comparing the EELS patterns of crystalline and amorphous Si 24 …”
Section: Resultssupporting
confidence: 71%
See 1 more Smart Citation
“…The flake‐like structures are similar to the flakes reported in literature for 2D zeolites prepared by mechanical exfoliation, crystal‐mediated CVD growth, and the very recent work by Birdsong et al in which graphene oxide was used as sacrificial template. [ 7,32 ] EELS spectra of these areas confirm that the flakes consist of ultrathin silica sheets, similar to the previously mentioned 2D zeolites [16b,17] . Unlike these methods, however, the synthesis here is continuously producing ≈1 g h −1 (F100) of coated material of which based on TGA ≈65 wt% (Figure S13, Supporting Information) directly converts to silica.…”
Section: Resultssupporting
confidence: 77%
“…As expected, a clear signature of graphene and a well‐defined Si L edge could be identified after the background signal was removed (reference EELS spectra taken from). [ 16 ] The Si signal not only indicates the presence of pure silicon [ 17 ] but also contains contributions from SiC. [ 18 ] The small shoulder at ≈115 eV might originate from bonded oxygen as in SiOC ceramics or an SiC/SiO 2 interface, [ 19 ] but a more precise deconvolution is difficult due to the signal noise.…”
Section: Resultsmentioning
confidence: 99%