Distinction of [220] and [204] textures of Cu(In,Ga)Se2 film and their growth behaviors depending on substrate nature and Na incorporation

Cho, Dae‐Hyung; Kim, Jeha; Chung, Yong‐Duck

doi:10.1016/j.tsf.2015.05.062

Cited by 2 publications

(1 citation statement)

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“…The CIGS film was deposited using a co-evaporation method through a multistage process. Detailed information of our solar cell baseline process can be found in previous papers [17]- [20]. We prepared six 0.47 cm 2 sized cells using different bufferlayer thicknesses.…”

Section: Methodsmentioning

confidence: 99%

Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

Cho¹,

Lee²,

Wi³

et al. 2016

ETRI J

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We analyzed the interface characteristics of Zn‐based thin‐film buffer layers formed by a sulfur thermal cracker on a Cu(In,Ga)Se2 (CIGS) light‐absorber layer. The analyzed Zn‐based thin‐film buffer layers are processed by a proposed method comprising two processes — Zn‐sputtering and cracker‐sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn‐based film thicknesses, an 8 nm–thick Zn‐based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band‐gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter‐diffusion.

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Section: Methodsmentioning

confidence: 99%

Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

Cho¹,

Lee²,

Wi³

et al. 2016

ETRI J

Self Cite

View full text Add to dashboard Cite

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CIGS and CIS Nanomaterials for Solar Cells

Garje

Suroshe

Revaprasadu

2017

Nanostructured Materials for Type III Photovoltaics

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Photovoltaic technology has the potential to become a major source of power generation. The fabrication of solar cells has improved stepwise from one generation to the next. First generation solar cells, i.e. silicon-based solar cells, were grown by the Czochralski process using a single crystal of silicon. Thin film development started in the second generation of solar cells. Nanocrystal-based solar cells were later introduced as the third generation of solar cells. This chapter discusses the progressive development of research into solar cells from one generation to the next. The focus is on nanocrystal-based copper indium gallium selenide (CIGS) and copper indium selenide (CIS) solar cells because of their flexibility, light weight, low cost, long life and excellent outdoor stability. Methods for the synthesis of CIGS- and CIS-based solar cells are discussed in detail.

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Distinction of [220] and [204] textures of Cu(In,Ga)Se2 film and their growth behaviors depending on substrate nature and Na incorporation

Cited by 2 publications

References 32 publications

Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

CIGS and CIS Nanomaterials for Solar Cells

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