The
characteristics of field effect transistors (FETs) fabricated
using two-dimensional (2D) transition-metal dichalcogenides (TMDCs)
can be modulated by surface treatment of the active layers. In this
study, an ionic π-conjugated polyelectrolyte, poly(9,9-bis(4′-sulfonatobutyl)fluorene-alt-1,4-phenylene) potassium (FPS-K), was used for the surface
treatment of MoSe2 and WS2 FETs. The photoluminescence
(PL) intensities of monolayer (1L)-MoSe2 and 1L-WS2 clearly decreased, and the PL peaks were red-shifted after
FPS-K treatment, suggesting a charge-transfer effect. In addition,
the n-channel current of both the MoSe2 and WS2 FETs increased and the threshold voltage (V
th) shifted negatively after FPS-K treatment owing to the charge-transfer
effect. The photoresponsivity of the MoSe2 FET under light
irradiation (λex = 455 nm) increased considerably,
from 5300 A W–1 to approximately 10 000 A
W–1, after FPS-K treatment, and similar behavior
was observed in the WS2 FET. The results can be explained
in terms of the increase in electron concentration due to photogating.
The external quantum efficiency and photodetectivity of both FETs
were also enhanced by the charge-transfer effect resulting from surface
treatment with FPS-K containing mobile cations (K+) and
fixed anions (SO3
–), as well as by the
photogating effect. The variation in charge-carrier density due to
the photogating and charge-transfer effects is estimated to be approximately
2 × 1012 cm–2. The results suggest
that π-conjugated polyelectrolytes such as FPS-K can be a promising
candidate for the passivation of TMDC-based FETs and obtaining enhanced
photoresponsivity.