This paper presents a new bootstrapped switch with high speed and low nonlinear distortion. Instead of¯xed voltage, the gate-to-source voltage of switch varies with input to implement rst-order body e®ect compensation. Post-layout simulations have been done in standard 0.18m CMOS process at 1.8 V, and results indicate that at 200 MHz sample rate, a peak signal-tonoise-and-distortion ratio (SNDR) of 98.4 dB, spurious-free dynamic range (SFDR) of 105.7 dB and total harmonic distortion (THD) of À104.9 dB can be acquired. For input frequency up to the 60 MHz frequency, proposed structure maintains jTHDj over 85 dB, SFDR better than 86 dB, respectively.