2012
DOI: 10.1109/tnano.2012.2215336
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Distributed Amplifiers Based on Spindt-Type Field-Emission Nanotriodes

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Cited by 10 publications
(5 citation statements)
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“…The proposed configuration is a four-port device, consisting of two inputs and two outputs. This feature can facilitate a nonlinear optical absorption response and also make the structure to operate as an all-optical passive amplifier [42][43][44][45]. The presented structural asymmetry is the key characteristic to enhance these interesting phenomena, bringing them in the extremely compact subwavelength scale, and making them accessible with realistic excitation configurations.…”
Section: Introductionmentioning
confidence: 99%
“…The proposed configuration is a four-port device, consisting of two inputs and two outputs. This feature can facilitate a nonlinear optical absorption response and also make the structure to operate as an all-optical passive amplifier [42][43][44][45]. The presented structural asymmetry is the key characteristic to enhance these interesting phenomena, bringing them in the extremely compact subwavelength scale, and making them accessible with realistic excitation configurations.…”
Section: Introductionmentioning
confidence: 99%
“…Conventional tunneling devices, however, encounter large tunneling resistances, high operating voltages, and stability issues [19,20]. With the rapid improvement in atomic layer deposition [21,22] and nanolithography techniques [23][24][25][26][27], as well as two-dimensional materials [28,29], the operating voltage of MIM devices can be mitigated by downscaling the tunneling junction to the nanometer scale and replacing the vacuum channel with certain transition metal oxides that have large bandgaps and large electron affinities, e.g. Ta 2 O 5 , TiO 2 , or Nb 2 O 5 [21,22], [28].…”
mentioning
confidence: 99%
“…As an additional advantage, electron field-emission, with a ballistic transport in vacuum, is insensitive to the environment temperature and ionizing radiation. For these reasons, field-emission nanodevices with very fast switching time and high current densities are widely used in vacuum micro/nanoelectronics [33][34][35][36][37][38]. Recently, there have been some efforts to explore the electron field emissions from freestanding graphene monolayers [39][40][41][42], which is expected to be largely enhanced due to the large geometric (electrostatic field) enhancement factor of graphene (10 3 -10 4 ).…”
mentioning
confidence: 99%
“…The current density produced by a graphene emitter can be described by the well-known Fowler-Nordheim equation [33][34][35][36][37][38][40][41][42]:…”
mentioning
confidence: 99%
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