“…Conventional tunneling devices, however, encounter large tunneling resistances, high operating voltages, and stability issues [19,20]. With the rapid improvement in atomic layer deposition [21,22] and nanolithography techniques [23][24][25][26][27], as well as two-dimensional materials [28,29], the operating voltage of MIM devices can be mitigated by downscaling the tunneling junction to the nanometer scale and replacing the vacuum channel with certain transition metal oxides that have large bandgaps and large electron affinities, e.g. Ta 2 O 5 , TiO 2 , or Nb 2 O 5 [21,22], [28].…”