Semiconductor Lasers 1993
DOI: 10.1007/978-1-4613-0481-4_7
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Distributed-Feedback Semiconductor Lasers

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Cited by 10 publications
(11 citation statements)
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“…This effect can be seen in Figure Compressive strain increases gain, reduces threshold current densities, and slightly shifts lasing wavelength (due to band deformation potentials) [2], all of which improve operation of high power lasers. There are added benefits to modulated lasers in cluding reduction of frequency chirp, resulting from a decreased "antiguiding" factor, …”
Section: Electrically Pumped Semiconductor Lasersmentioning
confidence: 92%
See 1 more Smart Citation
“…This effect can be seen in Figure Compressive strain increases gain, reduces threshold current densities, and slightly shifts lasing wavelength (due to band deformation potentials) [2], all of which improve operation of high power lasers. There are added benefits to modulated lasers in cluding reduction of frequency chirp, resulting from a decreased "antiguiding" factor, …”
Section: Electrically Pumped Semiconductor Lasersmentioning
confidence: 92%
“…Auger Recombination Auger recombination, like non-radiative recombination, results in a reduction of carriers, but no increase in photons. Auger recombination is more significant in small band-gap materials because the hole probability is much larger for a given carrier density [2,19].…”
Section: Non-radiative Recombinationmentioning
confidence: 99%
“…The DFB spectral plots correspond to sample S.5, which has been detuned by +16 nm from the nominal wavelength of 1310 nm to the longer wavelength of 1326 nm (at 25°C). The spectral output shift to longer wavelengths observed at the high temperature of 85°C is typical of DFB laser sources which shift typically by a rate of ∼0.1 nm/°C due to the temperature dependence of refractive index . The side mode suppression ratio (SMSR) is maintained above 40 dB across the temperature range from 25°C to 85°C ( I = 50 mA).…”
Section: Grating Design and Spectral Performancementioning
confidence: 98%
“…The linear dependence observed between the laser temperature and wavelength operation observed in Fig. 4 b can be explained as a consequence of the linear variation of the laser effective mode index with temperature [12]. The rate of wavelength shift against temperature d λ /d T for each facet coatings (0.47 nm/°C for R 1 R 2 = 0.09, 0.51 nm/°C for R 1 R 2 = 0.14, 0.52 nm/°C for R 1 R 2 = 0.36 and 0.53 nm/°C for R 1 R 2 = 0.85) is commensurate with values reported in the literature (e.g.…”
Section: Spectral Characteristics In Temperaturementioning
confidence: 99%