Distributed-Model-Based Approach for Electrical and Thermal Analysis of High-Frequency GaN HEMTs

Abstract

A fully distributed modeling approach is proposed in this paper that incorporates the wave propagation effects in developing the equivalent circuit and works as a simulation tool for analyzing highfrequency transistors such as GaN high electron mobility devices. The details regarding the device arrangement are discussed and it is explained how the parameter extraction in the proposed modeling approach is developed merely based on the physical structure of the device along with the electrode dimensions and geometry. The governing equations for obtaining the currents and voltages at each time interval and spatial distance are analyzed based on a finite difference time domain method, where an implicit scheme is developed to ensure the unconditional stability of the technique along with reducing the computation time of the developed solution. The obtained results for the current gain and maximum available gain are verified by the measurement results from a 0.1-µm nitrogen-polar oriented GaN HEMT at 0.25-67 GHz frequency range. The results are also generated for wider cases and over higher frequency ranges to show the importance of using a fully distributed modeling technique and demonstrate the convergence of the results. An experiment is also developed regarding the thermal analysis of the high-frequency HEMT device and to discuss the heat transfer phenomenon over the device width and its effects on the distributed modeling approach are analyzed.

Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations

“…Device width plays a crucial role in controlling the extrinsic dynamic behavior of the device and is one of those parameters which needs to be controlled very accurately with the fabrication technology depending on the device application. Inaccurate design/dimensions of the active component specially device width may cause electromagnetic phenomenon (wave‐particle interaction) to become prominent, thus inversely affecting the device behavior 97 . Therefore, for device modeling and optimization it is essential to identify the device width for projecting the device and application‐level performance 98 .…”

“…Inaccurate design/dimensions of the active component specially device width may cause electromagnetic phenomenon (wave-particle interaction) to become prominent, thus inversely affecting the device behavior. 97 Therefore, for device modeling and optimization it is essential to identify the device width for projecting the device and application-level performance. 98 Moreover, this work can be extended to predict/classify devices based on other geometrical parameters such as the thickness of barrier, buffer, spacer, L G , L GS , L GD , and so forth.…”

High‐Efficiency ZnO‐Based Ultraviolet Photodetector with Integrated Single‐Walled Carbon Nanotube Thin‐Film Heater

“…A hybrid high efficiency ZnO PD system is a combination of sol–gel‐derived ZnO PD and a SWCNT heater. The ZnO MSM PD was deposited on the front side of a c‐plane sapphire substrate with a thermal conductivity of 25.2 W mK −1 , [ 48 ] while the SWCNT heater was placed on the back side of the substrate, as shown in Figure 1a.…”