Distribution of D1 dislocation luminescence centers in Si+-implanted silicon and the photoluminescence model

Nagornykh, Sergeyi N.; Pavlenkov, V. I.; Tetelbaum, D. I.; Mikhaiylov, Aleksey N.; Белов, А. И.; Королев, Д. С.; Shushunov, A. N.; Bobrov, Aleksandr I.; Pavlov, Dmitry; Shek, E. I.

doi:10.1016/j.moem.2015.11.007

Cited by 4 publications

(1 citation statement)

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“…1, a представлено ПЭМ-изображение поперечного среза образца Si с дислокационной структурой после облучения ионами В + с дозой 1 [13], наблюдаться не должно. Кроме того, энергетическая структура легированных бором образцов тоже может быть иной, чем в нелегированных образцах [14].…”

Section: экспериментальные результаты и их обсуждениеunclassified

Влияние примеси бора на излучательные свойства дислокационных структур в кремнии, сформированных путем имплантации ионов Si-=SUP=-+-=/SUP=-

Терещенко¹,

Королев²,

Михайлов³

et al. 2018

Физика И Техника Полупроводников

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The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by Si^+ ion implantation with subsequent annealing is studied. It is shown that the implantation of B^+ ions has a significant effect on the dislocation-related luminescence intensity, spectrum and the temperature dependence of the D1-band intensity. It is found that the temperature dependence is nonmonotonous and involves two regions, in which the D1-band intensity increases with increasing temperature and has two well-pronounced maxima at 20 K and 60–70 K. The maximum at 20 K is associated with the morphological features of the dislocation structure under study, whereas the maximum at 60–70 K is associated with the additional implantation of the boron impurity into the dislocation region of the samples. It is established that the intensities of the experimentally observed maxima and the position of the high-temperature maximum depend on the implanted boron concentration.

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Section: экспериментальные результаты и их обсуждениеunclassified