Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

Job, R.; Niedernostheide, F.‐J.; Schulze, Hans‐Joachim; Schulze, Holger

doi:10.1557/proc-1195-b11-02

Cited by 3 publications

(3 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the case of the plasma hydrogenated samples, this oxidation step is omitted. However, the impact of such an oxidation has no significant impact on the formation of the investigated donors, especially in the layer between the surface and the end-of-range region [14]. During implantation, the samples are tilted by 7° from the <100>-direction to avoid channeling effects.…”

Section: Methodsmentioning

confidence: 99%

Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles

Laven

Job²,

Schustereder

et al. 2011

SSP

Self Cite

View full text Add to dashboard Cite

By introducing radiation damage and hydrogen and successively annealing with low thermal budgets, hydrogen-related donors are created in oxygen-lean silicon. Hydrogen-related donor profiles are induced in float-zone silicon by implanting hydrogen and/or helium and successive annealing with or without additional hydrogen introduction by a hydrogen plasma. The efficiency of the conversion of the radiation-induced damage into the hydrogen-related donors differs in dependence of the method of damage and hydrogen introduction. In proton implanted samples, the ultimate introduction rate of the donors is significantly lower than it is in helium and hydrogen co-implanted samples. Furthermore, the depth distribution of the hydrogen-related donors shows a deviance from the simulated distribution of the radiation damage induced by proton implantation not seen in case of helium-induced damage. The change in doping efficiency is discussed in respect to the hydrogen content in the different experiments.

show abstract

Section: Methodsmentioning

confidence: 99%

Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles

Laven

Job²,

Schustereder

et al. 2011

SSP

Self Cite

View full text Add to dashboard Cite

show abstract

“…Post-implantation hydrogen-plasma exposures were carried out with a Radio-Frequency (RF) setup operating at 13.56 MHz standard frequency and providing a plasma power of 150 W. The plasma hydrogenations were executed at various substrate temperatures between 350 °C and 500 °C for either 15 min or 60 min. The temperature profiles applied during the H-plasma exposure were as follows: 1) The samples were heated up to the desired substrate temperature applying a temperature ramp of 100 °C/min; 2) after the temperature had stabilized (within 1 min), the plasma was ignited, and the temperature was kept constant during the whole plasma treatment (± 1 °C); 3) after the plasma exposure was finished, the heater was immediately switched off and the temperature decreased exponentially; 4) after another 1 h -1.5 h, the samples were taken out of the process chamber at temperatures well below 150 °C (for further details see (7,8)).…”

Section: Methodsmentioning

confidence: 99%

“…The actual publication is based on recent investigations, in which two-step processes with successive H + -or He + -implantation and hydrogen-plasma treatment were analyzed. Having applied spreading resistance measurements, the formation and annihilation of ntype and p-type doping profiles in light-ion implanted and plasma-hydrogenated Float FZ silicon samples was investigated (7,8). FZ Si wafers were used for these studies, since they are the standard substrates for power-device applications.…”

Section: Introductionmentioning

confidence: 99%

Detection of Vacancy Distributions by Decoration with Hydrogen

Job¹,

Niedernostheide²,

Schulze³

et al. 2009

ECS Trans.

View full text Add to dashboard Cite

A well-known method for the determination of vacancy distributions in silicon is based on the decoration of vacancies with in-diffused platinum (Pt) and subsequent profiling of the Ptdistribution with DLTS (Deep Level Transient Spectroscopy) analysis. The vacancy profile can then be correlated with the substitutional Pt profile. However, there are significant drawbacks of this method: The in-diffusion of platinum is a high-temperature step, which already can alter the vacancy profile; moreover, DLTS measurements with a suitable depth resolution are time-consuming and difficult. Therefore, it is proposed in this paper to decorate the vacancies with hydrogen by processes finally resulting in the formation of vacancy-and hydrogen-related donor and acceptor states. The determination of such doping profiles and by this the detection of vacancy distributions can be easily enabled by depthresolved spreading resistance measurements with a very good spatial resolution. Hydrogen atoms for the decoration of vacancies can be incorporated by plasma exposure or ion implantation.

show abstract

Activation and Dissociation of Proton-Induced Donor Profiles in Silicon

Laven

Job

Schulze

et al. 2013

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The impact of the thermal budget on the introduction and dissociation of hydrogen-related donor profiles in high purity silicon implanted with protons in the energy range of MeV is investigated. The hydrogen-related donors are radiation-induced defect complexes decorated by the implanted hydrogen. The appearance of the donor profiles is limited to the annealing temperature regime between about 350 °C and 500 °C. The activation of the doping profiles is limited by the diffusion of the implanted hydrogen from the end-of-range region throughout the radiation-induced damage profile. This formation process is adequately described by a diffusion model with an effective activation energy of 1.2 eV. The thermal stability of the hydrogen-related donor profiles is limited by the dissociation of the donors. The deactivation of the doping is modeled by two hydrogen-related donor species with effective dissociation energies of 2.6 eV and 3 eV. The formation and dissociation mechanisms described in the present study define the upper and lower limits of the post-implantation thermal budget, respectively, for a sensible use of proton implantation doping in crystalline silicon.

show abstract

Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

Cited by 3 publications

References 14 publications

Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles

Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles

Detection of Vacancy Distributions by Decoration with Hydrogen

Activation and Dissociation of Proton-Induced Donor Profiles in Silicon

Contact Info

Product

Resources

About