Distribution of Solute in Crystals Grown from the Melt. Part II. Experimental

Abstract

Experiments have been performed on the distribution coefficients of a number of solute elements in germanium crystals grown from the melt. The variation of distribution coefficient with conditions of crystallization is examined in the light of the theory of Part I. The incorporation of solute elements into the crystal is shown to depend critically upon the transport processes occurring in the melt.

Definition of a First Process Window for Purification of Aluminum via “Cooled Finger” Crystallization Technique

“…By selecting the most accurate coefficient of determination (R 2 ), Equation (4) is obtained, representing a linear relationship between the crystal growth rate, cooling gas flow rate as well as the number of rotations per minute while having a R 2 = 0.934. As stated before, the cooling gas flow rate has a strong impact on the average growth rate, while the rotation rate has a smaller effect, resulted from the amounts of the factors A and B in Equation (4). The reason is most likely that the cooling gas flow rate has a significant influence on the thermal gradient in the growth front, resulting in a rapid solidification and therefore leads to a much higher growth rate.…”

“…Therefore, a more realistic approach can be evaluated by taking the growth rate of the solid, the diffusion of the impurity into the melt and the thickness of the diffusion boundary layer into account. This optimized approach leads to the so called effective distribution coefficient (k eff ), shown in Equation (2) and described in detail by Burton, Prim and Slichter (known as BPS model) [3][4][5]. As it is seen in Equation (2), the diffusion layer thickness and the growth velocity of the crystallized material are the most important factors in this model, both able to be controlled in the best form through a mixing of the melt as well as cooling effect of the crystallizer.…”

Introduction to the History of Semiconductors

“…Various references for impurity distribution or segregation include. [105][106][107][108][109] Silicon crystals grown by the Czochralski method tends to be contaminated by oxygen. Silicon may be contaminated by various impurities during crystal growth or subsequent processing.…”

Microstructures of Cu-Ge Alloy Rods Pulled from a Hyperperitectic Melt by the Czochralski Method

“…13) 4.2 Relationship between peritectic structure and pulling rate 4.2.1 Influence of lowering of the melt temperature…”

“…Moreover, according to the BPS theorem, 12,13) if the growth rate of the solid phase is assumed to be nearly equal to the pulling rate R, k is expressed as…”