Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV

Abstract

Boron and phosphorus were implanted in p-type and n-type silicon wafers in the energy range from 0.1 to 1.5 MeV. Three different methods were used to determine the distribution of the ions: SIMS, CV and NRA. The results were fitted to a Pearson IV distribution in order to extract moments for describing the distributions analytically. The projected ranges agree well with the theoretical values. Deviations are observed at higher energies. Projected range standard deviations are significantly greater than the tabulated values. The skewness clearly deviates from available tabulated data, although the same trend is observed.

High energy implanted transistor fabrication

“…The Rp for boron is 1.65 /~m and for phosphorus 1.15 /~m [5]. The ratio of the maximum concentration to the concentration at the surface is in practice only 500.…”

“…The curve labelled poly is determined experimentally with secondary ion mass spectrometry and complies with the theoretical pre- dictions. The curve labelled mono is a curve fit of the experimental results of Oosterhoff [5]. The curves differ in essential points.…”