The conductivity fluctuations in 1-MeV, boron-implanted layers in silicon have been investigated at room temperature with the anneal temperature as a parameter. The 1/ f  noise parameter α has been calculated from conductance, Hall voltage, and noise experiments. Annealing of the implants causes, in addition to an increase in the number of electrically active impurities, a decrease in the 1/ f  noise parameter α by a factor of at least 50. The α value is proportional to eΔE/kTan, with an annealing activation energy ΔE=1.1 eV in a temperature range of 722 K <Tan<1022 K. The annealing affects the quality of the crystal, the scattering mechanism, the temperature dependence of the mobility, and the value of α. The better the crystal, the lower the 1/ f  noise parameter α.

Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 X 10 l5 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the "B(a n)14N nuclear reaction. The distribution of the lattice disorder as a , function of depth was determined from channeling of MeV a-particles. This was done in the as-implanted case and after furnace annealing at temperatures up to 1000°C. A short description of the applied techniques is presented. The crystal disorder was found to almost vanish during annealing at 600°C and to reappear at higher annealing temperatures at a depth coinciding with the projected range of the boron ions. Both the boron and the disorder depth profiles are broadened after annealing at 1000°C. The results agree with recent findings on defect annealing in silicon.

Boron and phosphorus were implanted in p-type and n-type silicon wafers in the energy range from 0.1 to 1.5 MeV. Three different methods were used to determine the distribution of the ions: SIMS, CV and NRA. The results were fitted to a Pearson IV distribution in order to extract moments for describing the distributions analytically. The projected ranges agree well with the theoretical values. Deviations are observed at higher energies. Projected range standard deviations are significantly greater than the tabulated values. The skewness clearly deviates from available tabulated data, although the same trend is observed.

Buried layers of boron in silicon have been made by 1 MeV implantations up to a dose of 10" cm-*. The annealing of the implantation damage has been studied with Van der Paw and Hall measurements. It is concluded that lattice damage reduces the mobility only for annealing temperatures below 600°C. The average mobilities measured after annealing at temperatures above 600°C correspond accurately to the values calculated from the most recent literature data. based on scattering by the lattice and by the active impurities. Complete activation was obtained after 60 min annealing at 700°C.

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