Annealing of ion-implanted resistors reduces the 1/ f  noise

Abstract

The conductivity fluctuations in 1-MeV, boron-implanted layers in silicon have been investigated at room temperature with the anneal temperature as a parameter. The 1/ f noise parameter α has been calculated from conductance, Hall voltage, and noise experiments. Annealing of the implants causes, in addition to an increase in the number of electrically active impurities, a decrease in the 1/ f noise parameter α by a factor of at least 50. The α value is proportional to eΔE/kTan, with an annealing activation energy ΔE=1.1 eV in a temperature range of 722 K <Tan<1022 K. The annealing affects the quality of the crystal, the scattering mechanism, the temperature dependence of the mobility, and the value of α. The better the crystal, the lower the 1/ f noise parameter α.

Impact of Post-Oxidation Annealing on Low-Frequency Noise, Threshold Voltage, and Subthreshold Swing of p-Channel MOSFETs

“…On the other hand, the pure mobility fluctuation theory [14]- [16] uses an empirical relationship where the relative noise is inversely proportional to the number of carriers and proportional to a parameter [14]- [16]. Our experimental result can be explained successfully by using this approach and the extracted values are summarized in Table I which are reasonable [7], [15].…”

On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs

“…Mechanical damage or implantation damage of the crystal lattice results in increasing a G ; by orders of magnitude, whereas the mobility only decreases by about 10% [8].…”

“…After the lattice damage had been restored by annealing at 900 1C, a exp was down to 10 À6 [8]. Fig.…”

Low 1∕f noise, full bridge, microcantilever with longitudinal and transverse piezoresistors

“…N depends on the piezoresistor volume and implant dose. Vandamme et al 11,12 showed that ␣ decreases for longer, higher temperature anneals which increase the crystal quality. The anneal diffusion length, ͱDt, where D is the temperature-dependent, dopant diffusion coefficient and t is the anneal time, is a measure of anneal effectiveness and presumably, crystal quality.…”