Low 1∕f noise, full bridge, microcantilever with longitudinal and transverse piezoresistors

Mallon, Joseph R.; Rastegar, Ali; Barlian, A.A.; Meyer, M. T.; Fung, Tze-Ching; Pruitt, Beth L.

doi:10.1063/1.2825466

Cited by 24 publications

(22 citation statements)

References 14 publications

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“…Table V presents Table V are based on a peSSImIStIC Hooge coefficient (0: = 10-3) -this is usually found in metal resistors [11]. However, the Hooge coefficient for high con centration piezoresistors is much lower than for metal resis tors [12]. The carriers concentration q is 2.1 X 10 19 (lIcm3).…”

Section: Noise Analysismentioning

confidence: 98%

Low-power MEMS pressure sensor for wireless biomedical applications

García-Alonso

Bautista

Sosa

et al. 2011

2011 IEEE 54th International Midwest Symposium on Circuits and Systems (MWSCAS)

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Reducing power consumption leads to improve wireless sensor autonomy, increase battery life, and reduce radiated power. State-of-the-art blood pressure sensors based on piezoresistive transducers in a full Wheatstone bridge configura tion uses low ohmic values because high sensitivity and low noise approach. In this work, the piezoresistance values are increased in order to reduce one order of magnitude the power consumption.The noise introduced by this improvement was proved that does not limit the accuracy for 8-bit applications. Therefore, a low power consumption pressure sensor with high sensitivity and low noise is proposed. Power consumption versus sensitivity tradeoff is analyzed in detail. I. IN T RODUCTIONWireless blood pressure sensors are especially suitable for surgery rooms, intensive care or post-anesthetic recovery units, even small laboratory animals. Low power consump tion is a critical point to improve the distance between the wireless sensor and monitoring equipments and improve the battery life of the sensors, reducing at the same time the power radiated to establish the wireless communication. State of-the-art blood pressure transducers, based on four resis tors in a full Wheatstone bridge configuration, are usually optimized for sensitivity [1]-[3] and linearity. Temperature effect on sensitivity in silicon piezoresistive transducer has been studied in detail in [3]- [5]. Analysis of the noise in piezoresistive transducer has been presented in [5]. Most of the piezoresisitive transducer are ion-implanted into a thin silicon monocrystalline membrane. Ty pical values are in the range between 100 fl and 3 kfl, powered between 3 V and 5 V. This means a power consumption between 3 m W and 250 m W, typically 20 mW, only for the full Wheatstone bridge without the required signal conditioning circuit -a signal conditioning circuit with at least one operational amplifier is required.In this work, the piezoresistance ohmic values are increased in order to reduce the power consumption. It was proved that the noise introduced by this improvement does not limit the accuracy for 8-bit applications. The achieved power con sumption results are below 322 /-l W, including both the full Wheatstone bridge (62/-lW) and the signal conditioning sys tem, for a mixed signal technology of 1.0 /-lm CMOS process, including integrated sensors -XC 10 technology process from XFAB. This work proposes optimal tradeoff design points for piezoreslstlve transducer and sensor in terms of sensitivity, power consumption and noise. This paper is organized as follows. In Section II mechanical behavior of a diaphragm -pressure sensor-is analyzed in detail. In addition, the layout dimensions and positions of several piezoresistances -250, 500 and 1000 kfl-are calculated. The analysis of both sensitivity and power consumption of a full Wheatstone bridge and differential amplifier circuit to achieve optimum power and sensitivity design points is presented in Section m. Finally, conclusions are presented in Section IV. II. ELECTROMECHAN...

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Section: Noise Analysismentioning

confidence: 98%

Low-power MEMS pressure sensor for wireless biomedical applications

García-Alonso

Bautista

Sosa

et al. 2011

2011 IEEE 54th International Midwest Symposium on Circuits and Systems (MWSCAS)

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“…Es liegt jedoch in der selben Größenordnung wie bei vergleichbaren Anordnungen [23]. Da die genauen Prozessparameter der Dotierung nicht veröffentlicht sind, kann ein Grund in der fehlerhaften Annahme des Parameters α liegen, welcher abhängig von Dotierungstiefe und Annealing-Temperatur Werte im Bereich von 10 -3 bis 10 -6 annehmen kann [17; 23].…”

Section: Silizium-dmsunclassified

Piezoresistive Dehnungsmesselemente für adaptronische Systeme

Rausch¹,

Werthschützky

Salun

et al. 2012

Tm - Technisches Messen

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Zusammenfassung Es werden zwei Sensortechnologien für den Einsatz zur Dehnungsmessung in adaptronischen Systemen vorgestellt. Inhomogen dotierte, piezoresistive Siliziumelemente und gedruckte Sensorschichten werden hinsichtlich ihrer Sensoreigenschaften verglichen. Die zum Verständnis nötigen Grundlagen beider Sensortechnologien werden erläutert. Neben dem statischen Übertragungsverhalten wird auch das Rauschen der Sensoren untersucht.Summary Two sensing technologies for realizing strain sensors, which can be integrated into adaptronic systems, are presented. Inhomogeniously doped silicon chips based on the piezoresistive principle and printed strain sensors are compared. The operating mode of each sensor type is explained. The static characteristics and the noise as one of the main internal error sources are discussed.

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“…However, values of ␣ as low as 10 −7 have been reported for implanted piezoresistors 34 and specific fabrication processes ͑e.g., reactive ion etching͒ have been shown to affect the 1 / f noise performance of piezoresistors. 35 The Wheatstone bridge is composed of two piezoresistors which are uncorrelated 1 / f noise sources so the 1 / f noise power is increased by a factor of 2 ͑voltage increased by ͱ 2͒, and the integrated voltage noise power is…”

Section: Hooge Noisementioning

confidence: 99%

“…Additionally, in cases where the 1 / f noise of the piezoresistor is less than that of the instrumentation amplifier it is necessary to use an ac modulation technique. 34 Based on our results, the optimal piezoresistor design has greater 1 / f noise than the instrumentation amplifier for many applications and the measurement electronics can use a simple dc bias configuration. We optimized cantilevers for several commercial instrumentation amplifiers to explore the effect of system noise on cantilever design ͑Table II͒.…”

Section: B Balancing the Noisementioning

confidence: 99%