The annealing of 1 MeV implantations of boron in silicon

Abstract

Buried layers of boron in silicon have been made by 1 MeV implantations up to a dose of 10" cm-*. The annealing of the implantation damage has been studied with Van der Paw and Hall measurements. It is concluded that lattice damage reduces the mobility only for annealing temperatures below 600°C. The average mobilities measured after annealing at temperatures above 600°C correspond accurately to the values calculated from the most recent literature data. based on scattering by the lattice and by the active impurities. Complete activation was obtained after 60 min annealing at 700°C.

Initial activation behavior of boron at low temperatures with implantation doses below the amorphization threshold

“…Boron activation has been studied for several decades since the use of ion implantation as a doping technique for silicon integrated circuits. [6][7][8][9][10][11][12][13][14][15][16] Seidel and Mac Rae performed isochronal and isothermal annealing experiments to investigate boron activation in the temperature range of 400 °C-1000 °C. 7) Reverse annealing was observed with a medium implantation dose at temperatures ranging from 500 °C to 600 °C.…”