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Thermal annealing behavior of secondary defects in silicon implanted with MeV energetic boron ions has been studied. We snggest a new type of enhanced annealing effect of donble implantation, which can be used effectively to suppress or eliminate the secondary defects in such implanted silicon samples. The physical mechanism of the suppression and elimination processes is discussed.

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The relativistic equation ofmotion for electrons in a cylindrical condenser is presented precisely. The analytical expression for the trajectory of electrons in the vicinity of the circular trajectory is given approximately, which has an error of about 1% in comparison with numerical calculations. The properties of the focuses are discussed with the theoretical results of this paper.

In this paper, the secondary defects and their annealing behaviours in Zn+, Mg+, Be+ ion-implanted InSb have been investigated by means of the plan-view transmission electron microscopy (TEM), cross-sectional TEM(XTEM) and Rutherford backscattering and channeling spectroscopy. The result shows that the secondary defects caused by the lighter Be+ ion implantation are much less than that caused by the heavier Zn+ ion implantation. And the ion Mg+, in the region of medium dose (about 1×1031cm2), causes the damage easy to restore. The effect of annealing temperature is investigated from 360℃ to 440℃, and the result indicates that the 360℃ is a better annealing temperature. The figuration of secondary defects in ion-implanted InSb is differant from that in ion-implanted Si: the secondary defects in ion-implanted InSb consist of dislocations and dislocation networks mainly, and the dislocation loop is not dominant, however, precipitates and fault tetrahedras also exist in it.