SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONS

Abstract

Thermal annealing behavior of secondary defects in silicon implanted with MeV energetic boron ions has been studied. We snggest a new type of enhanced annealing effect of donble implantation, which can be used effectively to suppress or eliminate the secondary defects in such implanted silicon samples. The physical mechanism of the suppression and elimination processes is discussed.