DLTS measurement of energetic levels, generated in silicon detectors

We present the nal results of radiation hardness and life time studies of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs). Following the encouraging results obtained in a previous life time test of neutron irradiated LEDs, we built an automatic measurement system in order to make long term tests with a large numberof irradiated devices feasible. After irradiating about 170 LEDs from two dierent manufacturers and about 140 VCSELs with neutron and proton uences as high (and in some cases about twice as high) as those expected at the inner tracker of ATLAS, we report on the radiation damage, the conditions required for its annealing, and we present post{irradiation failure rates for LEDs and VCSELs. The life time after irradiation was investigated by operating the diodes at an elevated temperature of 50 C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From our measurements we calculate radiation damage constants and we nd a proton{ to{neutron damage ratio of 3:2 0:1 in GaAs for 24 GeV protons and for the neutrons with a peak energy of about 1 MeV available at the RAL ISIS facility. This result is in excellent agreement with recent NIEL calculations and provides an important c heck of the NIEL hypothesis.

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“…Such information could be obtained e.g. from Deep Level Transient Spectroscopy (DLTS) measurements [58,80].…”

Section: Injection Annealing Of Abb Hafo Ledsmentioning

confidence: 99%

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

Beringer

Borer

Mommsen

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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“…see [32,33,39,41,42], [98][99][100] and references therein) and silicon detectors (e.g. see [101][102][103][104][105][106][107][108][109][110][111][112][113][114][115] and references therein) by fast neutrons, i.e. typically above 10 keV, which induce displacement damage.…”

Section: Non-ionization-energy-loss and Displacement Damagementioning

confidence: 99%

“…see [154,158]), like for example (a) the divacancy referred to as a 'G7-centre' (V-V, indicated also as V 2 , i.e. two adjacent vacant lattice sites [159][160][161][162]) in various charge states (see also [163][164][165][166] and references therein), (b) vacancy-oxygen 17 (V-O) referred to as 'A-centre' or 'B1-centre' [168,169] (see also [170] and references therein), (c) vacancy-dopant impurity (for instance, V-P or V-As in n-type silicon) referred to as 'E-centre' or 'G8-centre' [171][172][173] and iv) others (e.g. see sections 3-5 in chapter II of part I of [1], section 7.3 of [2], sections 2.4 and 3.2.1 of [32], sections 2.2.1-2.2.4 of [33] and sections 3.2.1-3.2.3 of [174]).…”

Section: Radiation Induced Defectsmentioning

confidence: 99%

“…Examples of DLTS spectra for p + -n silicon junctions with n-type FZ (float-zone) and MCz (Magnetic Czochralski) substrates are shown in figures 11 and 12, respectively [165] (see also [104] for details about the MCz substrate). These detectors 22 with an active area of 0.5 × 0.5 cm 2 were irradiated with a fast neutron 23 Table 2.…”

Section: (Dlts)mentioning

confidence: 99%

“…of MCz sample) of hole-traps are observed between about 90 and 350 K. The measured energy levels of these (electron and hole) traps are in agreement with those determined in [170,180] (see table 2). Furthermore, a complete discussion of the observed defects and their association to determined energy levels is presented in [165,170,180] (and references therein). From an inspection of figures 11 and 12, we can notice that the ratio (R trap ) of the trap concentrations 24 over donor concentration depends on the type of substrate, as expected.…”

Section: (Dlts)mentioning

confidence: 99%

See 2 more Smart Citations

Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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Electrical conduction at low temperatures in high energy silicon detectors before and after irradiation with neutrons

Croitoru

Rancoita

Rattaggi

et al. 1996

Nuclear Instruments and Methods in Physics Research Section B:

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DLTS measurement of energetic levels, generated in silicon detectors

Cited by 14 publications

References 12 publications

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

Particle interaction and displacement damage in silicon devices operated in radiation environments

Electrical conduction at low temperatures in high energy silicon detectors before and after irradiation with neutrons

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