Do hot electrons produce excess noise?

Jungemann, C.; Meinerzhagen, B.

doi:10.1109/essder.2005.1546652

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…Because such excess noise effects are field-driven [14], it could be expected that they would increase sharply when entering the sub-100-nm regime, where channel length scales down much more rapidly than supply voltage, resulting in large lateral electric fields. Indeed, larger deviations from pure thermal noise have been experimentally observed in sub-100-nm channels [15], [16], while in extremely short channels (10 nm) full shot noise was measured [17].…”

Section: Introductionmentioning

confidence: 99%

RF-Noise Modeling in Advanced CMOS Technologies

Smit

Scholten

Pijper

et al. 2014

IEEE Trans. Electron Devices

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RF circuit design in deep-submicrometer CMOS technologies relies heavily on accurate modeling of thermal noise. Based on Nyquist's law, predictive modeling of thermal noise in MOSFETs was possible for a long time, provided that parasitic resistances and short-channel effects were properly accounted for. In sub-100-nm technologies, however, microscopic excess noise starts to play a significant role and its incorporation in thermal noise models is unavoidable. Here, we will review several crucial ingredients for accurate RF noise modeling, with emphasis on sub-100-nm technologies. In particular, a detailed derivation and discussion are presented of our microscopic excess noise model. It is shown to qualitatively explain the observed noise (across bias and geometry) in a wide range of commercially available sub-100-nm foundry processes. Besides, the impact of excess noise on the minimum noise figure is discussed.

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Section: Introductionmentioning

confidence: 99%

RF-Noise Modeling in Advanced CMOS Technologies

Smit

Scholten

Pijper

et al. 2014

IEEE Trans. Electron Devices

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“…Moreover, it was shown that the drain-induced barrier lowering effect ͑DIBL͒ is a major concern for an accurate analysis of velocity overshoot. 18 Consequently, we have optimized the shorter device (L g ϭ 0.1 m) to have an I off lower than 0.1 nA/m. Longer devices have the same structure, which ensures low DIBL.…”

Section: Simulated Devicesmentioning

confidence: 99%

Assessment of Anomalous Behavior in Hydrodynamic Simulation of CMOS Bulk and Partially Depleted SOI Devices

Munteanu

Carval

2002

J. Electrochem. Soc.

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A thorough investigation of unphysical phenomena occurring in hydrodynamic simulation of deep-submicrometer devices has been performed using 2D numerical simulation on realistic devices. We clearly show that anomalous behaviors exist in all major commercial simulation codes and concern both partially depleted silicon-on-insulator devices (inverse kink effect) and bulk transistors (positive substrate current effect). Since sophisticated solutions, but not yet completely verified, have been recently suggested for enhancing the hydrodynamic model, we propose here a simple and extremely practical solution for assessing the unphysical effects in hydrodynamic simulation of contemporary devices. © 2002 The Electrochemical Society. All rights reserved.

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