Domain bistability in photoexcited GaAs multiple quantum wells

Tomlinson, A. M.; Fox, A. M.; Foxon, C.T.

doi:10.1103/physrevb.61.12647

Cited by 9 publications

(6 citation statements)

References 13 publications

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“…Nevertheless, the main effect of the bistability is due to a different location of the CAL forming the domain boundary and not the extent of the domain boundary. This bi-or multistability also exists in undoped, photoexcited SLs as already predicted theoretically by Bonilla et al [68] and observed experimentally by Tomlinson et al [157]. A different kind of bistability is observed when the sample exhibits current self-oscillations [158], which will be discussed in section 5.…”

Section: Bi-and Multistabilitysupporting

confidence: 73%

Non-linear dynamics of semiconductor superlattices

2005

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In the last decade, non-linear dynamical transport in semiconductor superlattices (SLs) has witnessed significant progress in theoretical descriptions as well as in experimentally observed non-linear phenomena. However, until now, a clear distinction between non-linear transport in strongly and weakly coupled SLs was missing, although it is necessary to provide a detailed description of the observed phenomena. In this review, strongly coupled SLs are described by spatially continuous equations and display self-sustained current oscillations due to the periodic motion of a charge dipole as in the Gunn effect for bulk semiconductors. In contrast, weakly coupled SLs have to be described by spatially discrete equations. Therefore, weakly coupled SLs exhibit a more complex dynamical behaviour than strongly coupled ones, which includes the formation of stationary electric field domains, pinning or propagation of domain walls consisting of a charge monopole, switching between stationary domains, self-sustained current oscillations due to the recycling motion of a charge monopole and chaos. This review summarizes the existing theories and the experimentally observed non-linear phenomena for both types of semiconductor SLs.

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Section: Bi-and Multistabilitysupporting

confidence: 73%

Non-linear dynamics of semiconductor superlattices

2005

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“…The jumps in the current as the magnetic field is swept are in a way related to the multi-stability observed in weakly coupled superlattices [14][15][16][17][18][19][20][21] in the sense that both phenomena are caused by the relocation of the electric field domain boundary. However, our periodic sample 1 does not display any hysteresis or multi-stability phenomena in its currentvoltage characteristics.…”

Section: Resultsmentioning

confidence: 99%

“…In some cases, a hysteresis in the I -V characteristic of weakly coupled superlattices has been observed [14][15][16][17]. This hysteresis, which is connected with a multistability of the current, is due to changes in the electric field domain boundary.…”

Section: Introductionmentioning

confidence: 99%

Current bistability in a weakly coupled multi-quantum well structure: a magnetic field induced ‘memory effect’

Feu¹,

Villas‐Bôas²,

Cury³

et al. 2009

J. Phys. D: Appl. Phys.

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A study of magnetotunnelling in weakly coupled multi-quantum wells reveals a new phenomenon which constitutes a kind of memory effect in the sense that the electrical resistance of the sample after application of the magnetic field is different from before and contains the information that a magnetic field was applied previously. The change in the electric field domain configuration triggered by the magnetic field was compared for two samples, one strictly periodic and another with a thicker quantum well inserted into the periodic structure. For applied biases at which two electric field domains are present in the sample, as the magnetic field is increased a succession of discontinuous reductions in the electrical resistance is observed due to the magnetic field-induced rearrangement of the electric field domains, i.e. the domain boundary jumps from well to well as the magnetic field is changed. The memory effect is revealed for the aperiodic structure as the electric field domain configuration triggered by the magnetic field remains stable after the field is reduced back to zero. This effect is related to the multi-stability in the current–voltage characteristics observed in some weakly coupled multi-quantum well structures.

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“…Manifestations of vertical transport in weakly coupled semiconductor doped superlattices (SLs) include electric field domain formation, [1][2][3] multistability, [4][5][6] self-sustained current oscillations, [7][8][9] and driven and undriven chaos. [10] Stationary electric field domains appear in voltage biased SLs if the doping is large enough.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of current self-oscillations and electric-field domains in sequential- tunneling doped superlattices

2001

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We examine how the current-voltage characteristics of a doped weakly coupled superlattice depends on temperature. The drift velocity of a discrete drift model of sequential tunneling in a doped GaAs/AlAs superlattice is calculated as a function of temperature. Numerical simulations and theoretical arguments show that increasing temperature favors the appearance of current self-oscillations at the expense of static electric-field domain formation. Our findings agree with available experimental evidence.

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Domain bistability in photoexcited GaAs multiple quantum wells

Cited by 9 publications

References 13 publications

Non-linear dynamics of semiconductor superlattices

Non-linear dynamics of semiconductor superlattices

Current bistability in a weakly coupled multi-quantum well structure: a magnetic field induced ‘memory effect’

Temperature dependence of current self-oscillations and electric-field domains in sequential- tunneling doped superlattices

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