Domain nucleation and hysteresis loop shape in piezoresponse force spectroscopy

Morozovska, Anna N.; Eliseev, Eugene A.; Kalinin, Sergei V.

doi:10.1063/1.2378526

Cited by 58 publications

(42 citation statements)

References 21 publications

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“…This simple interpretation was supported by the exact 24,25 and decoupled theories 26,27 that related the measured signal, piezoelectric, dielectric, and elastic properties of materials, and domain/wall geometries, [28][29][30] often with the analyses available in the form of simple linear relationships. Jointly, these theoretical developments provide well developed numerical foundation of PFM, and establish the veracity of physical interpretations.…”

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confidence: 79%

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

2017

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United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan). Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modelling. We show that magnitudes of these effects are remarkably close, and give rise to complex switching diagrams as a function of pressure and film thickness with non-trivial topology or switchable and non-switchable regions.

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confidence: 79%

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

2017

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“…As such, PFS hysteresis measurements convey information differently than those related to hysteresis loops that are measured in capacitor structures, which reflect a multitude of nucleation events occurring within an extended period of time. 71,72 The PFS hysteresis loops often contain reproducible fine structure features (kinks) somewhat similar to structures in forcedistance curves in AFM. The studies by Alexe's group have associated the presence of the fine structure features with their proximity to a ferroelastic domain wall.…”

Section: Switching Spectroscopy By Pfmmentioning

confidence: 99%

Piezoresponse Force Microscopy: A Window into Electromechanical Behavior at the Nanoscale

Bonnell¹,

Kalinin²,

Kholkin³

et al. 2009

MRS Bull.

195

133

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Piezoresponse force microscopy (PFM) is a powerful method widely used for nanoscale studies of the electromechanical coupling effect in various materials systems. Here, we review recent progress in this field that demonstrates great potential of PFM for the investigation of static and dynamic properties of ferroelectric domains, nanofabrication and lithography, local functional control, and structural imaging in a variety of inorganic and organic materials, including piezoelectrics, semiconductors, polymers, biomolecules, and biological systems. Future pathways for PFM application in high-density data storage, nanofabrication, and spectroscopy are discussed. AbstractPiezoresponse force microscopy (PFM) is a powerful method widely used for nanoscale studies of the electromechanical coupling effect in various materials systems. Here, we review recent progress in this field that demonstrates great potential of PFM for the investigation of static and dynamic properties of ferroelectric domains, nanofabrication and lithography, local functional control, and structural imaging in a variety of inorganic and organic materials, including piezoelectrics, semiconductors, polymers, biomolecules, and biological systems. Future pathways for PFM application in high-density data storage, nanofabrication, and spectroscopy are discussed.

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“…In this case, the emergence of remnant states correspond to formation and growth of classical ferroelectric domains, well explored both analytically [301][302][303][304] and via phase field modelling. 305,306 The general features of this process involve nucleation above certain threshold voltage and subsequent growth with time and bias.…”

Section: Ferroelectric Switchingmentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

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270

206

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Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

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Domain nucleation and hysteresis loop shape in piezoresponse force spectroscopy

Abstract: Electromechanical hysteresis loop measurements in Piezoresponse Force Microscopy

Cited by 58 publications

References 21 publications

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

Piezoresponse Force Microscopy: A Window into Electromechanical Behavior at the Nanoscale

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

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