2016
DOI: 10.1016/j.ceramint.2016.09.085
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Domain-reorientation-induced polarization wake-up of PbTiO3 based ferroelectric thin films

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Cited by 8 publications
(2 citation statements)
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“…The increase in P r with cycling is known as a wake-up effect and is reported for some PZT films and more commonly for HfO 2 -based ferroelectrics. The wake up for PZT is mostly observed for sol–gel films and is attributed to the pinning of domains in the films, which leads to internal bias fields and double peaks in the I–E loops . With increased cycling of the electric field, the domains that are pinned because of defects such as point defects, oxygen and/or lead vacancies, and grain boundaries reorient themselves. , The thus-formed new domain structure is more stable and has a higher remnant polarization.…”
Section: Resultsmentioning
confidence: 99%
“…The increase in P r with cycling is known as a wake-up effect and is reported for some PZT films and more commonly for HfO 2 -based ferroelectrics. The wake up for PZT is mostly observed for sol–gel films and is attributed to the pinning of domains in the films, which leads to internal bias fields and double peaks in the I–E loops . With increased cycling of the electric field, the domains that are pinned because of defects such as point defects, oxygen and/or lead vacancies, and grain boundaries reorient themselves. , The thus-formed new domain structure is more stable and has a higher remnant polarization.…”
Section: Resultsmentioning
confidence: 99%
“…The increase of P r with cycling is known as wake-up effect and reported for some PZT films [61], and more commonly for HfO 2 based ferroelectrics [62][63][64][65][66]. The wake-up for PZT is mostly observed for sol-gel films and attributed to pinning of domains in the films, which leads to internal bias fields and double peaks in the I-E loops [63].…”
Section: Ferroelectric Propertiesmentioning
confidence: 99%