Domain switching contribution to the ferroelectric, fatigue and piezoelectric properties of lead-free Bi_0.5(Na_0.85K_0.15)_0.5TiO₃ films

Abstract

Lead-free Bi0.5(Na0.85K0.15)0.5TiO3 films have been prepared via a solution-gelation technique.

Synthesis of 0.64Pb(Mg1/3Nb2/3)O3–0.36PbTiO3 ceramic near morphotropic phase boundary for high performance piezoelectric, ferroelectric and pyroelectric applications

“…Thus, PMN-PT ceramic exhibits excellent anti-fatigue properties over 10 4 switching cycles. This implies that factors (such as oxygen vacancies, defects, and volatilization of Pb) that are responsible for degradation in polarization are minimal for the synthesized PMN-PT ceramic [36,37]. The results confirmed reliability of PMN-PT ceramic for longer duration of repeated ferroelectric applications.…”

RETRACTED: A study approach on ferroelectric domains in BaTiO3

“…These techniques allow the imaging of ferroelectric domains architecture at~10 nm level while providing direct information on localized electromechanical activity. Chen et al have studied the research progress on ferroelectric domains of lead-free films with relatively good ferroelectric and piezoelectric response which have been attributed to the films well-defined domain structure [19]. In a further work, the authors were able to improve the magnetic coupling of BiFeO 3 /Bi 4 Ti 3 O 12 composite obtained by a chemical solution deposition with desirable ferroelectric, piezoelectric and dielectric responses as well as low leakage current, paving the way towards its future application in sensors and spin devices.…”

Aluminum impregnated zinc oxide engineered poly(vinylidene fluoride hexafluoropropylene)‐based flexible nanocomposite for efficient harvesting of mechanical energy

“…With the application of dc‐bias across 10PALZO film, electric dipoles are rotated around the carbon backbone generating ferroelectricity within it which is confirmed by the ferroelectric switching behavior of the phase‐voltage hysteresis loop 5 . Since the piezoelectric coefficient (d 33 ) is directly proportional to the electromechanical response of the material, the d 33 ‐voltage loops can be indirectly derived from the amplitude‐voltage butterfly loop using the modified equation of converse piezoelectric effect d 33 = D‐D 1 /V‐V 1 , where D 1 is the piezoelectric displacement and V 1 is the applied voltage at the intersection 49 . Figure 14A represents the d 33 ‐V loops of pure 10PALZO composite films.…”

“…5 Since the piezoelectric coefficient (d 33 ) is directly proportional to the electromechanical response of the material, the d 33 -voltage loops can be indirectly derived from the amplitude-voltage butterfly loop using the modified equation of converse piezoelectric effect d 33 = D-D 1 /V-V 1 , where D 1 is the piezoelectric displacement and V 1 is the applied voltage at the intersection. 49 14A and Figure S9 was $15, 21, and 59 PM/V for pure PVDF-HFP, 10PZO, and 10PALZO, respectively. The result infers that the incorporation of ZnO nanorods within the PVDF-HFP matrix cannot enhance the piezoelectric coefficient significantly.…”