Domains and domain dynamics in fluorite-structured ferroelectrics

Abstract

Ferroelectricity in fluorite-structured ferroelectrics such as HfO2 and ZrO2 has been attracting increasing interest since its first publication in 2011. Fluorite-structured ferroelectrics are considered to be promising for semiconductor devices because of their compatibility with the complementary metal–oxide–semiconductor technology and scalability for highly dense information storage. The research on fluorite-structured ferroelectrics during the first decade of their conceptualization has been mainly focused on elucidating the origin of their ferroelectricity and improving the performance of electronic devices based on such ferroelectrics. Furthermore, as is known, to achieve optimal performance, the emerging biomimicking electronic devices as well as conventional semiconductor devices based on the classical von Neumann architecture require high operating speed, sufficient reliability, and multilevel data storage. Nanoscale electronic devices with fluorite-structured ferroelectrics serve as candidates for these device systems and, thus, have been intensively studied primarily because in ferroelectric materials the switching speed, reliability, and multilevel polarizability are known to be strongly correlated with the domains and domain dynamics. Although there have been important theoretical and experimental studies related to domains and domain dynamics in fluorite-structured ferroelectrics, they are yet to be comprehensively reviewed. Therefore, to provide a strong foundation for research in this field, herein, domains, domain dynamics, and emerging applications, particularly in neuromorphic computing, of fluorite-structured ferroelectrics are comprehensively reviewed based on the existing literature.

CMOS-compatible compute-in-memory accelerators based on integrated ferroelectric synaptic arrays for convolution neural networks

“…In a voltage sweep range of −6 to 6 V, a ferroelectric capacitor exhibited positive and negative remnant polarization of 15.1 and −14.1 C/cm 2 , respectively. These results confirmed that HfZrO x had ferroelectric characteristics and that its polarization characteristics could be adjusted by changing the amplitude of the applied voltages (39,40). We fabricated synaptic transistor arrays by integrating FeTFTs with IZO and HfZrO x (Fig.…”

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

“…[249] Therefore, the polarization switching pathways of the polar o-phase were investigated by several researchers. [384][385][386][387][388] The initial investigation showed that the energy barrier between two different polarization states (i.e., ±P) in HfO 2 is ≈ 20 times higher than that of the conventional BaTiO 3 ferroelectric films (Figure 20a). [360] It has been reported that the o-HfO 2 could be switched by moving four oxygen ions upward or downward along the polar c-axis.…”

A phase field model combined with genetic algorithm for polycrystalline hafnium zirconium oxide ferroelectrics

“…[3][4][5][6][7][8] The origin of ferroelectricity has been studied extensively due to the formation of an otherwise unstable, polar orthorhombic phase, stabilized by dopants, defects, and kinetic factors during growth. [9][10][11][12][13][14][15][16] The polarization switching behavior of ferroelectric materials is a decisive factor in the operation of ferroelectric devices. The coercive field (E c ) and remnant polarization (P r ) of a ferroelectric material are the defining parameters for its hysteretic behavior.…”