Dominant Influence of Interface Roughness Scattering on the Performance of GaN Terahertz Quantum Cascade Lasers

Cheng, Jianpeng; Quach, Patrick; Wang, Ding; Liu, Fang; Liu, Shangfeng; Yang, Liuyun; Liu, Huapeng; Shen, Bo; Tong, Yuzhen; Wang, Xinqiang

doi:10.1186/s11671-019-3043-6

Cited by 14 publications

(3 citation statements)

References 35 publications

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“…Epitaxial growth of wurtzite Sc-III-N has been demonstrated utilizing state-of-the-art epitaxy techniques for III-nitride semiconductors, i.e., MBE [45] and MOCVD [51]. Epitaxial growth provides significant advantages in the control of phase purity, chemical composition, crystallinity, crystalline quality, interface/surface quality, defect formation, doping concentration, unintentional impurity incorporation, bandgap, polarization, and lattice-polarity compared to sputtering deposition [24,[45][46][47][48][69][70][71][72][73][74][75]. Moreover, the fully epitaxial growth of Sc-III-N by using MBE and MOCVD provides a viable path to integrate the strong piezoelectric response and ferroelectric functionality with well-established semiconductor platforms as well as the CMOS technology.…”

Section: Epitaxial Growth Of Sc-iii-n Alloysmentioning

confidence: 99%

Dawn of nitride ferroelectric semiconductors: from materials to devices

Wang

Mondal

et al. 2023

Semicond. Sci. Technol.

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III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-generation semiconductor and quantum technologies. The recent experimental demonstration of ferroelectricity in nitride materials, including ScAl(Ga)N, BAlN, and hBN, has inspired tremendous research interest. Due to the large remnant polarization, high breakdown field, high Curie temperature, and significantly enhanced piezoelectric, linear, and nonlinear optical properties, nitride ferroelectric semiconductors have enabled a wealth of applications in electronic, ferroelectronic, acoustoelectronic, optoelectronic, and quantum devices and systems. In this review, the development of nitride ferroelectric semiconductors from materials to devices is discussed. While expounding on the unique advantages and outstanding achievements of nitride ferroelectrics, the existing challenges and promising prospects have been also discussed.

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Section: Epitaxial Growth Of Sc-iii-n Alloysmentioning

confidence: 99%

Dawn of nitride ferroelectric semiconductors: from materials to devices

Wang

Mondal

et al. 2023

Semicond. Sci. Technol.

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“…In recent decades, two-dimensional semiconductor structures have been leading the development of optoelectronic and electronic devices with their strong spatial confinement of carriers and the resultant unique optical and electrical properties. − As the thickness of the ultrathin layers decreases down to the atomic level, interfacial regions become very dense to account for a large proportion of the whole structure. Moreover, given the complexity of interfacial problems, including atomic intermixing, , mismatch defects, − and imbalanced strain state, , the interface-induced impact could affect devices on diverse aspects, such as carrier mobility, , interfacial scattering degree, − and band alignment . Consequently, the interfacial status could be of great significance for the properties of various multilayered structures.…”

Section: Introductionmentioning

confidence: 99%

Insights into Growth-Oriented Interfacial Modulation within Semiconductor Multilayers

Zhang

Zhao

et al. 2021

ACS Appl. Mater. Interfaces

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Interfacial engineering plays a crucial role in regulating the quality and property of heterogeneous structures, especially for nanometerscaled devices. However, traditional methods for interfacial modulation (IFM) generally treat all the interfaces uniformly, neglecting the inherent disparities of interfaces like their growth sequence. Herein, it is found that the growthoriented characteristic of IFM strongly determines the main regions where the modulation takes effect. Specifically, in a semiconductor quantum well structure, the arsenic atoms modulated at the well-on-barrier (WoB) interface tend to diffuse into and thus affect the next-grown well layer. In contrast, the arsenic atoms introduced at the barrier-on-well (BoW) interface mainly take effect within the next-grown barrier layer. According to theoretical simulations and electron holography (EH) experiments, the depth of quantum wells and the height of potential barriers are extended by introducing arsenic atoms at WoB and BoW interfaces, respectively. Resultantly, while modulating at the BoW interface has little impact on the photoluminescence (PL) spectrum, applying IFM at the WoB interface could dramatically improve the luminescent intensity (about 30%), which demonstrates the impact of the growth-oriented characteristic. Furthermore, in situ bias EH results indicate that IFM at the WoB interface helps to suppress the quantum-confined Stark effect.

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“…These processes can be classified as elastic scatterings (alloy disorder, ionized charged impurity, interface roughness) and inelastic scatterings (acoustic and optical phonons, electron-electron interaction). [3][4][5][6][7][8] The most used quantum well structure for QCLs gain medium is GaAs/ AlGaAs, grown by metal-organic chemical vapor deposition or molecular beam epitaxy (MBE) techniques. Imperfect interfaces are a common issue in heterostructure epitaxy, by forming interface roughness (in-plane fluctuations) which can break in-plane invariances, 9) and compositional interdiffusion at interfaces (out-plane fluctuations) that additionally broaden the potential and perturb the electron transport along the growth direction.…”

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confidence: 99%

Terahertz quantum cascade laser considering compositional interdiffusion effect

Wang¹,

Lin²,

Chen³

et al. 2023

Appl. Phys. Express

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This study presents an experimental demonstration of the crucial role of compositional interdiffusion at interfaces in GaAs/AlGaAs alternating superlattices for developing the terahertz quantum cascade lasers operating at high temperatures. By growing GaAs/Al0.3Ga0.7As superlattices using the molecular beam epitaxy technique, an aluminum interdiffusion width of 0.95 nm (equivalent to ∼3.4 monolayers) is estimated. Incorporating this interdiffusion width as an additional design parameter has resulted in a 20 K improvement in the maximum operating temperature of the laser. To quantify the magnitude of the interdiffusion scattering effects on electron dynamics, an independent self-energy that functions based on the axial correlation length is introduced in the non-equilibrium Green’s function model. It clarifies that changes in the lifetime of quantum states and also the population fractions are primarily influenced by the deformation of wave functions at the injector when the interfaces become interdiffused.

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Dominant Influence of Interface Roughness Scattering on the Performance of GaN Terahertz Quantum Cascade Lasers

Cited by 14 publications

References 35 publications

Dawn of nitride ferroelectric semiconductors: from materials to devices

Dawn of nitride ferroelectric semiconductors: from materials to devices

Insights into Growth-Oriented Interfacial Modulation within Semiconductor Multilayers

Terahertz quantum cascade laser considering compositional interdiffusion effect

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