Donor and acceptor energies for muonium in GaAs

Lichti, R.L.; Bani-Salameh, H.N.; Carroll, B.R.; Chow, K. H.; Hitti, B.; Kreitzman, S. R.

doi:10.1103/physrevb.76.045221

Cited by 28 publications

(20 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the rapid reactivity of hydrogen means that many of the techniques that are used to investigate hydrogen in semiconductors are not able to probe isolated H. Studies of muonium ͑Mu 0 = + e − ͒ using the muon spin rotation/relaxation/resonance ͑SR͒ techniques are now widely recognized to be the main experimental source of information on isolated H in many semiconductors. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] Recall that the muon ͑ + ͒ is a radioactive particle with a lifetime of Ϸ2.2 s. It can be considered a pseudoisotope of hydrogen with Ϸ 1 9 th the mass of the proton, but is still much heavier than the electron ͑Ϸ200ϫ ͒. Hence, the electronic structures of Mu 0 and H 0 are very similar.…”

Section: Introductionmentioning

confidence: 99%

Optically induced dynamics of muonium centers in Si studied via their precession signatures

et al. 2008

Self Cite

View full text Add to dashboard Cite

We studied the influence of the optical excitation on three muonium centers Mu T 0 , Mu BC 0 , and Mu BC + in high resistivity silicon. These investigations were carried out on the spin precession signature of each center as a function of temperature. It is found that photoexcitation resulted in significant enhancements of the depolarization rates of the precession signals as the three muonium centers underwent interactions with photogenerated free carriers. The results are described by a three-state model involving transitions between Mu T 0 , Mu BC 0 , and Mu BC + as well as spin exchange processes.

show abstract

Section: Introductionmentioning

confidence: 99%

Optically induced dynamics of muonium centers in Si studied via their precession signatures

et al. 2008

Self Cite

View full text Add to dashboard Cite

show abstract

“…While hydrogen can be difficult to directly assess spectroscopically, the well-defined creation and decay properties of muons has led to significant success in the use of µSR as a spectroscopic probe of isolated defect centres in semiconductors that differ from hydrogen only by a mass factor (m Mu /m H ≈ 1/9) and the associated small difference in zero-point energy [85]. While µSR studies of conventional semiconductors such as Si [86] or GaAs [87] found charge transition levels for muonium lying deep within the band gap, as would be expected for the conventional behaviour of hydrogen in these materials, such measurements [84] provided the first spectroscopic evidence of the donor-nature of hydrogen in ZnO, summarized in Fig. 5.…”

Section: Donor Nature Of Hydrogenmentioning

confidence: 99%

Conductivity in transparent oxide semiconductors

King

Veal

2011

J. Phys.: Condens. Matter

226

180

View full text Add to dashboard Cite

Abstract. Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band-gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the presence of interstitial and substitutional species are still somewhat open questions, it is one of the leading contenders for unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case of conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity based on features of the bulk band structure common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

show abstract

“…[7] That is to say that the equilibrium state (within the lifetime of the muon, of course), depending on doping, has either no bound electrons, i.e. the muon is bare, or has a pair of bound electrons -Mu − .…”

mentioning

confidence: 99%

Negatively Charged Muonium as a Detector of Electron Spin Polarization: a Puzzle and a Possible Theory

Gu¹,

Ziman²,

Maekawa³

2014

Proceedings of the International Symposium on Science Explored by Ultra Slow Muon (USM2013)

View full text Add to dashboard Cite

We explore theoretical explanations for laser pumped experiments, that have established that muonium can be a tool in spintronics for following non-equilibrium spin polarizations of the conduction electrons. In the original experiments on Si the sensitivity was argued to be due to spin exchange with the bound electron in muonium, but in GaAs an effect is seen even in the case of negatively charged muonium. This is more problematic, as spin exchange with a third electron should be weak given the spin singlet state of the two bound electrons of the negative muonium ion. We discuss a mechanism to explain the sensitivity of negatively charged muonium ions to the spin-polarization of semiconductors in terms of the coherent mixing of charge states induced by hybridization with the semiconducting host.

show abstract

Donor and acceptor energies for muonium in GaAs

Cited by 28 publications

References 22 publications

Optically induced dynamics of muonium centers in Si studied via their precession signatures

Optically induced dynamics of muonium centers in Si studied via their precession signatures

Conductivity in transparent oxide semiconductors

Negatively Charged Muonium as a Detector of Electron Spin Polarization: a Puzzle and a Possible Theory

Contact Info

Product

Resources

About