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By using photoexcitation, we unambiguously establish that the well-known diamagnetic muonium spin precession signal in Ge is in fact due to two diamagnetic states. Their temperature dependences are studied up to room temperature. The signal due to one of these states is strongly influenced by the photoexcited carriers while the other is not. The identification of these two centers is discussed.

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The relative effectiveness of 2‐chloro‐6‐(trichloromethyl) pyridine and potassium azide as nitrification inhibitors, formulated and applied to soil with anhydrous NH3, was compared in laboratory and growth chamber experiments. At an inhibitor level of 10 ppm, and after 14 days, NH4+ concentrations 0 to 2.5 cm from the point of release of NH3, NH3 + KN3, and NH3 + N‐Serve were 695, 810, and 887 ppm N respectively, while after 56 days corresponding values had decreased to 129, 316, and 609 ppm N. After 14 and 56 days of incubation in unplanted pots, KN3 was 60 and 40%, respectively, as effective as N‐Serve in suppressing nitrification. N‐Serve was more effective than KN3 during longer incubation periods because of its greater residual activity.In general, yields of ryegrass (Lolium sp.) and cotton forage (Gossypium hirsutum L.) followed the order of NH3 = NH3 + KN3 > NH3 + N‐Serve. The greater residual activity of N‐Serve compared with KN3 and the absence of root development in the center of the NH3 + N‐Serve retention zone, as well as the stunted and flaccid appearance of roots, was indicative of potential phytotoxicity of N‐Serve in this particular mode of application.

Properties of electrodeposited semiconductor thin films are dependent upon the electrolyte composition, plating time, and temperature as well as the current density and the nature of the substrate. In this study, the influence of the electrodeposition parameters such as deposition voltage, deposition time, composition of solution, and deposition temperature upon the properties of In2S3films was analyzed by the Taguchi Method. According to Taguchi analysis, the interaction between deposition voltage and deposition time was significant. Deposition voltage had the largest impact upon the stoichiometry of In2S3films and deposition temperature had the least impact. The stoichiometric ratios between sulfur and indium (S/In: 3/2) obtained from experiments performed with optimized electrodeposition parameters were in agreement with predicted values from the Taguchi Method. The experiments were carried out according to Taguchi orthogonal array L27(3^4) design of experiments (DOE). Approximately 600 nm thick In2S3films were electrodeposited from an organic bath (ethylene glycol-based) containing indium chloride (InCl3), sodium chloride (NaCl), and sodium thiosulfate (Na2S2O3·5H2O), the latter used as an additional sulfur source along with elemental sulfur (S). An X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) unit, and scanning electron microscope (SEM) were, respectively, used to analyze the phases, elemental composition, and morphology of the electrodeposited In2S3films.