2011
DOI: 10.1016/j.spmi.2011.05.015
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Donor binding energy and radiative life time of exciton in a strained InGaN/GaN quantum wire

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Cited by 4 publications
(1 citation statement)
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“…[15][16][17] Chafai et al [18] used the variational method to predict that in the spherical GaN/AlN core/shell quantum dot, the external electric field will reduce the binding energy of exciton state, and the increase of quantum dot size will also reduce the binding energy. Pattammal et al [19] studied the influence of well width on exciton radiation life-time in InGaN/GaN quantum wires. The results show that the radiation lifetime decreases monotonically with the increase of well width, and the trend becomes more obvious when the well width is smaller.…”
Section: Introductionmentioning
confidence: 99%
“…[15][16][17] Chafai et al [18] used the variational method to predict that in the spherical GaN/AlN core/shell quantum dot, the external electric field will reduce the binding energy of exciton state, and the increase of quantum dot size will also reduce the binding energy. Pattammal et al [19] studied the influence of well width on exciton radiation life-time in InGaN/GaN quantum wires. The results show that the radiation lifetime decreases monotonically with the increase of well width, and the trend becomes more obvious when the well width is smaller.…”
Section: Introductionmentioning
confidence: 99%